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Full-Text Articles in Engineering
Predicted Properties Of Microhollow Cathode Discharges In Xenon, J. P. Boeuf, L. C. Pitchford, K. H. Schoenbach
Predicted Properties Of Microhollow Cathode Discharges In Xenon, J. P. Boeuf, L. C. Pitchford, K. H. Schoenbach
Bioelectrics Publications
A fluid model has been developed and used to help clarify the physical mechanisms occurring in microhollow cathode discharges (MHCD). Calculated current-voltage (I-V) characteristics and gas temperatures in xenon at 100 Torr are presented. Consistent with previous experimental results in similar conditions, we find a voltage maximum in the I-V characteristic. We show that this structure reflects a transition between a low-current, abnormal discharge localized inside the cylindrical hollow cathode to a higher-current, normal glow discharge sustained by electron emission from the outer surface of the cathode. This transition, due to the geometry of …
Excimer Emission From Cathode Boundary Layer Discharges, Mohamed Moselhy, Karl H. Schoenbach
Excimer Emission From Cathode Boundary Layer Discharges, Mohamed Moselhy, Karl H. Schoenbach
Bioelectrics Publications
The excimer emission from direct current glow discharges between a planar cathode and a ring-shaped anode of 0.75 and 1.5 mm diameter, respectively, separated by a gap of 250 μm, was studied in xenon and argon in a pressure range from 75 to 760 Torr. The thickness of the “cathode boundary layer” plasma, in the 100 μm range, and a discharge sustaining voltage of approximately 200 V, indicates that the discharge is restricted to the cathode fall and the negative glow. The radiant excimer emittance at 172 nm increases with pressure and reaches a value of 4 W/cm2 for …
Emission Of Excimer Radiation From Direct Current, High-Pressure Hollow Cathode Discharge, Ahmed El-Habachi, Karl H. Schoenbach
Emission Of Excimer Radiation From Direct Current, High-Pressure Hollow Cathode Discharge, Ahmed El-Habachi, Karl H. Schoenbach
Bioelectrics Publications
A novel, nonequilibrium, high-pressure, direct current discharge, the microhollow cathode discharge, has been found to be an intense source of xenon and argon excimer radiation peaking at wavelengths of 170 and 130 nm, respectively. In argon discharges with a 100 μm diam hollow cathode, the intensity of the excimer radiation increased by a factor of 5 over the pressure range from 100 to 800 mbar. In xenon discharges, the intensity at 170 nm increased by two orders of magnitude when the pressure was raised from 250 mbar to 1 bar. Sustaining voltages were 200 V for argon and 400 V …
Microhollow Cathode Discharges, K. H. Schoenbach, R. Verhappen, R. Tessnow, F. E. Peterkin, W. W. Byszewski
Microhollow Cathode Discharges, K. H. Schoenbach, R. Verhappen, R. Tessnow, F. E. Peterkin, W. W. Byszewski
Bioelectrics Publications
The current–voltage characteristics of hollow cathode discharges and their predischarges in argon under dc and pulsed conditions were found to have a positive slope at pressures up to approximately 50 Torr, and currents up to 20 mA, at a hole diameter of 0.7 mm. In this range of pressure and current, parallel operation of hollow cathode discharges, without ballast, was demonstrated. Scaling to higher pressure is possible by reducing the hole diameter. Pulsed experiments with an array of cathode rings of 75 μm diameter allowed us to obtain parallel operation of more than 50 discharges at a pressure of 350 …
Studies Of High Field Conduction In Diamond For Electron Beam Controlled Switching, R. P. Joshi, M. K. Kennedy, K. H. Schoenbach, W. W. Hofer
Studies Of High Field Conduction In Diamond For Electron Beam Controlled Switching, R. P. Joshi, M. K. Kennedy, K. H. Schoenbach, W. W. Hofer
Bioelectrics Publications
Experimental studies on a vertical metal‐diamond‐silicon switch structure have been conducted for potential pulsed power applications. Both the dc current‐voltage characteristics and the transient switching response have been measured for a range of voltages. With a 1 μm diamond film, the switch has been seen to withstand electric fields up to 1.8 MV/cm. Our results show a polarity dependence which can be associated with current injection at the asymmetric contacts. Polarity effects were also observed in the presence of e‐beam excitation, and arise due to nonuniform carrier generation near the diamond‐silicon interface. Our switching transients were seen to follow …