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Full-Text Articles in Engineering
Direct Current Glow Discharges In Atmospheric Air, Robert H. Stark, Karl H. Schoenbach
Direct Current Glow Discharges In Atmospheric Air, Robert H. Stark, Karl H. Schoenbach
Bioelectrics Publications
Direct current glow discharges have been operated in atmospheric air by using 100 μm microhollow cathode discharges as plasma cathodes. The glow discharges were operated at currents of up to 22 mA, corresponding to current densities of 3.8 A/cm2 and at average electric fields of 1.2 kV/cm. Electron densities in the glow are in the range from 1012 to 1013 cm−3. Varying the current of the microhollow cathode discharge allows us to control the current in the atmospheric pressure glow discharge. Large volume atmospheric pressure air plasmas can be generated by operating microhollow cathode discharges …
Direct Current High-Pressure Glow Discharges, Robert H. Stark, Karl H. Schoenbach
Direct Current High-Pressure Glow Discharges, Robert H. Stark, Karl H. Schoenbach
Bioelectrics Publications
Stabilization and control of a high-pressure glow discharge by means of a microhollow cathode discharge has been demonstrated. The microhollow cathode discharge, which is sustained between two closely spaced electrodes with openings of approximately 100 μm diam, serves as plasma cathode for the high-pressure glow. Small variations in the microhollow cathode discharge voltage generate large variations in the microhollow cathode discharge current and consequently in the glow discharge current. In this mode of operation the electrical characteristic of this system of coupled discharges resembles that of a vacuum triode. Using the microhollow cathode discharge as plasma cathode it was possible …
Impact Of Field-Dependent Electronic Trapping Across Coulomb Repulsive Potentials On Low Frequency Charge Oscillations, R. P. Joshi, K. H. Schoenbach, P. K. Raha
Impact Of Field-Dependent Electronic Trapping Across Coulomb Repulsive Potentials On Low Frequency Charge Oscillations, R. P. Joshi, K. H. Schoenbach, P. K. Raha
Bioelectrics Publications
We have performed Monte Carlo simulations to obtain the field dependence of electronic trapping across repulsive potentials in GaAs. Such repulsive centers are associated with deep level impurities having multiply charged states. Our results reveal a field‐dependent maxima in the electronic capture coefficient, and the overall shape is seen to depend on the background electron density due to the effects of screening. Based on the Monte Carlo calculations, we have examined the stability of compensated semiconductors containing such repulsive centers. Our analysis indicates a potential for low frequency charge oscillations which is in keeping with available experimental data.