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Electric Field Mapping System With Nanosecond Temporal Rosolution, F. E. Peterkin, R. Block, K. H. Schoenbach
Electric Field Mapping System With Nanosecond Temporal Rosolution, F. E. Peterkin, R. Block, K. H. Schoenbach
Bioelectrics Publications
The electric field dependence of the absorption coefficient in semi‐insulating GaAs at the absorption edge was measured in a high‐voltage pulsed experiment. Pulse duration was kept below 50 ns in order to avoid thermal effects. A GaAs laser diode was used as a probe light source with wavelength varied from 902 to 911 nm. For fields up to 40 kV/cm the absorption coefficient increased from 3 to 17 cm−1 at 902 nm, with smaller absolute increases evident at the longer wavelengths. Calculation from theory was consistent with this behavior. The spatial variation of the electric field was also recorded …
Supralinear Photoconductivity Of Copper Doped Semi-Insulating Gallium Arsenide, K. H. Schoenbach, R. P. Joshi, F. Peterkin, R. L. Druce
Supralinear Photoconductivity Of Copper Doped Semi-Insulating Gallium Arsenide, K. H. Schoenbach, R. P. Joshi, F. Peterkin, R. L. Druce
Bioelectrics Publications
We report on the intensity dependent supralinear photoconductivity in GaAs:Si:Cu material. The results of our measurements show that the effective carrier lifetime can change over two orders of magnitude with variations in the intensity of the optical excitation. A threshold intensity level has been observed and can be related to the occupancy of the deep copper level. Numerical simulations have also been carried out to analyze the trapping dynamics. The intensity dependent lifetimes obtained from the simulations match the experimental data very well. Finally, based on the nonlinear intensity dependence of the effective lifetimes, a possible low‐energy phototransistor application for …