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Characterization And Mapping Of Crystal Defects In Silicon Carbide, Ejiro Emorhokpor

Theses

Silicon carbide (SiC) is a semiconductor with attractive properties, such as a wide bandgap (3. 26 eV), high dielectric strength, and high thermal conductivity that make it suitable for high power, highspeed electronic devices. A major roadblock to its wider application is the presence of defects, particularly micropipes and dislocations, in SiC wafers produced today and decreasing density of these defects is the most important challenge of the industry. The goal of this thesis was to design, build and test a system for detection and analysis of the defects in SiC wafers. The system is based on the reflection optical …