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Development Of An Ion Source For Implantation Of Decaborane, Ravidath Gurudath

Theses

Future generations of Si technology will require ultra shallow junctions (tens of nm) in the drain and source regions of MOS transistors. Fabrication of such shallow p-type junctions requires implantation of boron at ultra low energies (≡1keV), below the limits of standard ion implantation technology. A proposed solution involves implantation of B₁₀H_X⁺ ions in which boron atoms carry less than 10% of the beam energy. Thus shallow implantation may be possible with standard ion implanters operating at tens of kV.

This thesis is a part of the feasibility study of this novel technology. The ionization of …