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Engineering Commons

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Electrical and Computer Engineering

New Jersey Institute of Technology

1997

Chemical vapor deposition.

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Synthesis And Characterization Of Lpcvd Sic Films Using Novel Precursors, Mahalingam Bhaskaran Jan 1997

Synthesis And Characterization Of Lpcvd Sic Films Using Novel Precursors, Mahalingam Bhaskaran

Dissertations

A unique low pressure chemical vapor deposition (LPCVD) process has been developed to synthesize amorphous and crystalline SiC films using environmentally benign chemicals. The interrelationships governing the process variables, compositions and select properties of the resulting films were established. Such films can be used to produce high quality mask membrane for x-ray lithography. These films can also be used in fabricating high power electrical devices, and hetrojunction devices in conjunction with silicon.

Amorphous SiC films were synthesized using a single precursor, ditertiarybutylsilane, at temperatures below 850°C. Compositional analysis performed on these deposits revealed that, in the deposition temperature range of …