Open Access. Powered by Scholars. Published by Universities.®
Electrical and Computer Engineering
Missouri University of Science and Technology
Electric fields -- Measurement -- Mathematical models<br />Semiconductors -- Recombination -- Mathematical models<br />Transistors -- Effect of radiation on<br />Neutron irradiation<br />Semiconductors -- Recombination
Articles 1 - 1 of 1
Full-Text Articles in Engineering
A Mathematical Model For The Neutron Dependence Of Neutral Base Region Recombination, Jonas Bereisa Jr.
A Mathematical Model For The Neutron Dependence Of Neutral Base Region Recombination, Jonas Bereisa Jr.
Masters Theses
"A discrete, deterministic, mathematical model is developed for the neutral bulk base region of graded base devices which accounts for both the effects of recombination and the built-in electric field in the bulk base region at low, intermediate, and moderate current/injection levels. This model is applied to a study of neutron radiation effects in double diffused silicon transistors. Exact expressions are developed for the injected emitter, base and collector currents, the base recombination term, and the ratio of base current increase to collector current decrease as functions of device geometry, impurity profile, and neutron fluence. Neutron-induced current gain degradation is …