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Full-Text Articles in Engineering
A Simplification Heuristic For Large Flow Tables, R. J. Smith, James H. Tracey
A Simplification Heuristic For Large Flow Tables, R. J. Smith, James H. Tracey
Electrical and Computer Engineering Faculty Research & Creative Works
Flow tables specifying large asynchronous sequential circuits often contain more internal states than are required to specify desired circuit behavior. Known minimization techniques appear unsuited for reduction of such large (rows X columns > 250) flow tables, because of excessive computation and intermediate data requirements for problems of this size. The algorithm described here is intended to rapidly produce a simplified-but in general non-minimal-flow table. It is most economical when applied to extremely large tables and was devised primarily for automated design applications. The procedure has been programmed in PL/1 and has been incorporated into an asynchronous sequential circuit design automation …
State Assignment Selection In Asynchronous Sequential Circuits, Gary K. Maki, James H. Tracey
State Assignment Selection In Asynchronous Sequential Circuits, Gary K. Maki, James H. Tracey
Electrical and Computer Engineering Faculty Research & Creative Works
Methods already exist for the construction of critical race-free assignments for asynchronous sequential circuits. Some of these methods permit the construction of many assignments for the same flow table. The algorithm presented here consists of two easy to apply tests which select that critical race-free assignment most likely to produce a set of simple next-state equations. The algorithm has been programmed. Copyright © 1970 by The Institute of Electrical and Electronics Engineers, Inc.
Baseband Agc In An Am-Fm Telemetry System, Richard S. Simpson, William H. Tranter
Baseband Agc In An Am-Fm Telemetry System, Richard S. Simpson, William H. Tranter
Electrical and Computer Engineering Faculty Research & Creative Works
The use of AGc loops at the input and output of the FM link in an AM-FM telemetry system allows the mean-square transmitter deviation to be maintained near maximum value, even though data may be nonstationary. However, errors result because of the inability of the receiver AGc loop to track perfectly gain variations in the transmitter loop. In this paper the general characteristics of AGc are discussed, and a theoretical analysis is performed to determine the time constant, steady-state error, and tracking error for a first-order loop. Also, tracking error for first order and second-order loops is investigated by simulation. …
Electric Field Strength Dependence Of Surface Damage In Oxide Passivated Silicon Planar Transistors, C. A. Goben
Electric Field Strength Dependence Of Surface Damage In Oxide Passivated Silicon Planar Transistors, C. A. Goben
Electrical and Computer Engineering Faculty Research & Creative Works
A dependence of surface degradation induced by ionizing radiation in matched oxide-passivated silicon planar epitaxial transistors on junction fringing electric field strength present during exposure is reported. The electric field strength and gamma dose dependence are investigated of the decrease in the forward current gain, hFE (as reflected by the increase in the surface recombination current component), the increase in the surface recombination velocity (as reflected by the increase in the reciprocal of the minority carrier lifetime), and the increase in junction capacitance. Empirical prediction equations have been derived, for matched devices, correlating the normalized base current increase and the …
Nuclear Radiation Enhancement Of Transistor Forward Gain At High Frequencies, C. A. Goben, Y. P. Han
Nuclear Radiation Enhancement Of Transistor Forward Gain At High Frequencies, C. A. Goben, Y. P. Han
Electrical and Computer Engineering Faculty Research & Creative Works
This investigation has characterized the effects of fast neutron bombardment on a typical n-p-n transistor (2N914) of a common emitter amplifier operating at high-frequencies (>100 MHz) by means of s-parameter measurements from 120 MHz to 350 MHz, inclusive, every 10 MHz. The changes in the four (4) s-parameters and the trends and consequences of neutron bombardment are examined pictorially on graphs. The general effect of fast neutron bombardment is to decrease the magnitude of each s-parameter for frequencies below z. fT (where z = (O/1013)0.1). However, if the device is operating above z fT, the magnitudes of s11 (input …
Excitation Requirement For Rectified Output Ac Generators, Richard Thomas Smith
Excitation Requirement For Rectified Output Ac Generators, Richard Thomas Smith
Electrical and Computer Engineering Faculty Research & Creative Works
This paper develops a method for calculating the required dc field current of a three-phase synchronous ac generator for known dc load conditions and machine characteristics. The method is simple to apply and has shown good agreement with test data. The method is of utility for preliminary design and analysis of rectified output alternators, such as may be used in excitation systems of the largest ac generators, space vehicle power applications, or high-power industrial rectification. Copyright © 1971 by The Institute of Electrical and Electronics Engineers, Inc.
Etch Patterns On Zone-Refined Fe, M. E. Straumonis, Chang-Soo Kim
Etch Patterns On Zone-Refined Fe, M. E. Straumonis, Chang-Soo Kim
Electrical and Computer Engineering Faculty Research & Creative Works
Upon dissolution of zone-refined Fe in strong acids, mainly three kinds of corrosion patterns were observed in the crystallites of the sections. Regardless of the acids, the {110} plane always appeared on the three patterns in the form of smooth and even steps, ledges, or facets. The {112}, {122}, and {123} planes were also developed but to a much lesser degree. The {100} and {111} planes were not observed because grains of the respective orientation were missing on the sections. Attempts were made to explain the formation of the planes by taking into consideration the reticular density of the planes …
Neutron Dependence Of Neutral Base Region Recombination, J. Bereisa, C. A. Goben
Neutron Dependence Of Neutral Base Region Recombination, J. Bereisa, C. A. Goben
Electrical and Computer Engineering Faculty Research & Creative Works
A discrete, deterministic mathematical model has been developed for the bulk base region of graded base devices that accounts for both the effects of neutron-induced recombination and built-in electric field in the base region at low, intermediate, and moderate current/injection levels. Exact expressions are developed for the bulk base recombination current and the collector current as functions of neutron fluence. Exact expressions are derived for the base recombination term and the relative rates of neutron-induced base current increase and collector current decrease. These expressions involve exponential and hyperbolic functions and are well suited for numerical computations and theoretical analysis. Damage …