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Electrical and Computer Engineering

California Polytechnic State University, San Luis Obispo

2008

GaN laser

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Effects Of Transverse Mode Coupling And Optical Confinement Factor On Gallium-Nitride Based Laser Diode, Xiaomin Jin, Zhang Bei, Dai Tao, Zhang Guo-Yi Apr 2008

Effects Of Transverse Mode Coupling And Optical Confinement Factor On Gallium-Nitride Based Laser Diode, Xiaomin Jin, Zhang Bei, Dai Tao, Zhang Guo-Yi

Electrical Engineering

We have investigated the transverse mode pattern and the optical field confinement factor of gallium nitride(GaN) laser diodes (LDs) theoretically. For the particular LD structure, composed of approximate 4 μm thick n-GaN substrate layer, the maximum optical confinement factor was found to be corresponding to the 5th order transverse mode, the so-called lasing mode. Moreover, the value of the maximum confinement factor varies periodically when increasing the n-sideGaN layer thickness, which simultaneously changes and increases the oscillation mode order of the GaN LD caused by the effects of mode coupling. The effects of the thickness and the average composition of …

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