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Repetition Frequency Stabilisation Of Passively Mode-Locked Semiconductor Lasers, R. J. Helkey, Dennis J. Derickson, A. Mar, J. G. Wasserbauer, J. E. Bowers, R. L. Thornton
Repetition Frequency Stabilisation Of Passively Mode-Locked Semiconductor Lasers, R. J. Helkey, Dennis J. Derickson, A. Mar, J. G. Wasserbauer, J. E. Bowers, R. L. Thornton
Electrical Engineering
The repetition frequency of an external cavity mode-locked GaAs semiconductor diode laser has been stabilized by voltage controlled electrical feedback. The phase noise has been reduced by 40dB at 1 kHz offset from the carrier and timing jitter reduced from more than 30ps to 4ps. This technique can be used to stabilize millimetre-wave mode-locked lasers.