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Comparison Of The Electrical Response Of Cu And Ag Ion-Conducting Sdc Memristors Over The Temperature Range 6 K To 300 K, Kolton Drake, Tonglin Lu, Md. Kamrul H. Majumdar, Kristy A. Campbell

Electrical and Computer Engineering Faculty Publications and Presentations

Electrical performance of self-directed channel (SDC) ion-conducting memristors which use Ag and Cu as the mobile ion source are compared over the temperature range of 6 K to 300 K. The Cu-based SDC memristors operate at temperatures as low as 6 K, whereas Ag-based SDC memristors are damaged if operated below 125 K. It is also observed that Cu reversibly diffuses into the active Ge₂Se₃ layer during normal device shelf-life, thus changing the state of a Cu-based memristor over time. This was not observed for the Ag-based SDC devices. The response of each device type to sinusoidal …