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Engineering Commons

Open Access. Powered by Scholars. Published by Universities.®

Electrical and Computer Engineering

Boise State University

2017

Materials Science

Articles 1 - 2 of 2

Full-Text Articles in Engineering

Development And Assessment Of A Combined Reu/Ret Program In Materials Science, Noah Salzman, Rick Ubic Jun 2017

Development And Assessment Of A Combined Reu/Ret Program In Materials Science, Noah Salzman, Rick Ubic

Electrical and Computer Engineering Faculty Publications and Presentations

In this paper we present an evaluation and lessons learned from a joint Research Experience for Undergraduates (REU) and Research Experience for Teachers (RET) program focused on energy and sustainability topics within a Materials Science and Engineering program at a public university. This program brought eleven undergraduate science and engineering students with diverse educational and institutional backgrounds and four local middle and high school teachers on campus for an 8-week research experience working in established lab groups at the university.

Using the Qualtrics online survey software, we conducted pre-experience and post-experience surveys of the participants to assess the effects of …


Self-Directed Channel Memristor For High Temperature Operation, Kristy A. Campbell Jan 2017

Self-Directed Channel Memristor For High Temperature Operation, Kristy A. Campbell

Electrical and Computer Engineering Faculty Publications and Presentations

Ion-conducting memristors comprised of the layered chalcogenide materials Ge2Se3/SnSe/Ag are described. The memristor, termed a self-directed channel (SDC) device, can be classified as a generic memristor and can tolerate continuous high temperature operation (at least 150 °C). Unlike other chalcogenide-based ion conducting device types, the SDC device does not require complicated fabrication steps, such as photodoping or thermal annealing, making these devices faster and more reliable to fabricate. Device pulsed response shows fast state switching in the 10−9 s range. Device cycling at both room temperature and 140 °C show write endurance of at least …