Engineering Commons^™

Ion Beam Effect On Ge-Se Chalcogenide Glass Films: Non-Volatile Memory Array Formation, Structural Changes And Device Performance, M. R. Latif, T. L. Nichol, M. Mitkova, D. A. Tenne, I. Csarnovics, S. Kokenyesi, A. Csik

Electrical and Computer Engineering Faculty Publications and Presentations

In this work a scheme for fabricating a conductive bridge non-volatile memory arrays, using ion bombardment through a mask, is demonstrated. Blanket films and devices have been created to study the structural changes, surface roughness and device performance. Ar⁺ ions interaction on thin films of Ge_xSe_1−x system have been studied using Raman Spectroscopy, Atomic Force Microscopy (AFM) and Energy Dispersive X-Ray Spectroscopy (EDS). The performance of the memory devices has been analyzed based on the formation of vias and damage accumulation due to Ar⁺ ion interactions with Ge_xSe_1−x(x=0.25, 0.3 and 0.4) …