Engineering Commons^™

Design And Implementation Of An Accelerated Lifetime Testing Platform For Silicon Carbide Mosfets, Conner Deppe

All Graduate Theses and Dissertations, Fall 2023 to Present

In the last several years, the United States has seen a significant increase in sales of electric vehicles. The increase of electric vehicles brings the need for increased availability of public charging stations. In the last two years, satisfaction levels for public chargers have fallen significantly due to unreliability, which is raising concerns for new potential electric vehicle owners. To mitigate the reliability concerns, chargers must be physically understood so they can be consistently monitored to assess their health status. To understand the electric vehicle charging reliability, electrical components must first be understood. In the cutting-edge charging technology, the relatively …

Etching Process Development For Sic Cmos, Weston Reed Renfrow

Graduate Theses and Dissertations

Silicon Carbide (SiC) is an exciting material that is growing in popularity for having qualities that make it a helpful semiconductor in extreme environments where silicon devices fail. The development of a SiC CMOS is in its infancy. There are many improvements that need to be made to develop this technology further. Photolithography is the most significant bottleneck in the etching process; it was studied and improved upon. Etching SiC can be a challenge with its reinforced crystal structure. Chlorine-based inductively coupled plasma (ICP) etching of intrinsic SiC and doped SiC, SiO2, and Silicon has been studied. A baseline chlorine …

Junction Temperature Estimation Of Silicon Carbide Power Module Using Internal Gate Resistance As Temperature Sensitive Electrical Parameter, Michael Sykes

Graduate Theses and Dissertations

The junction temperature of a power module is measured non-intrusively and uninterrupted in its application by analyzing the dependency of gate resistance to temperature. The circuit configuration proposed consists of altering the gate loop path and adding a basic peak detection circuit with an added low-pass filter to accurately measure the small differences seen during a temperature change on the internal gate resistance. The testing on this Silicon Carbide power module shows that the internal gate resistance has a positive temperature coefficient. This causes the current and the voltage drop on the gate loop sensing resistance to reduce as the …

Characterization Of Wide-Bandgap Sic Field Effect Transistors And Their Active Gate Driving Circuit In High Power Applications, Arijit Sengupta

Legacy Theses & Dissertations (2009 - 2024)

Silicon Carbide (SiC) devices are slowly becoming one of the most reliable choices for high power density, high switching frequency applications with higher efficiency than Gallium Nitride (GaN) and Silicon (Si) devices. For a wide range of applications, such as Electric Motor Drives, Switching Power Supplies, and Renewable Energy Circuits, SiC devices are being tested and are found to yield prominent results.In this research, the characterization of two similarly rated commercially available SiC devices - a trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and a cascoded Junction Field Effect Transistor (JFET) are done. It is followed by a comparative analysis of both …

An Accurate And Efficient Electro-Thermal Compact Model Of Sic Power Mosfet Including Third Quadrant Behavior, Arman Ur Rashid

Graduate Theses and Dissertations

Due to narrower bandgap and lower critical electric field, silicon (Si) power devices have reached their limit in terms of the maximum blocking voltage capability. Exploiting this limitation, wide bandgap devices, namely silicon carbide (SiC) and gallium nitride (GaN) devices, are increasingly encroaching on the lucrative power electronics market. Unlike GaN, SiC devices can exploit most of the established fabrication techniques of Si power devices. Having substrate of the same material, vertical device structures with higher breakdown capabilities are feasible in SiC, unlike their GaN counterpart. Also, the excellent thermal conductivity of SiC, compared to GaN and Si, let SiC …

Design Of A 350 Kw Silicon Carbide Based 3-Phase Inverter With Ultra-Low Parasitic Inductance, Matthew Feurtado

Graduate Theses and Dissertations

The objective of this thesis is to present a design for a low parasitic inductance, high power density 3-phase inverter using silicon-carbide power modules for traction application in the electric vehicles with a power rating of 350 kW. With the market share of electric vehicles continuing to grow, there is a great opportunity for wide bandgap semiconductors such as silicon carbide (SiC) to improve the efficiency and size of the motor drives in these applications. In order to accomplish this goal, careful design and selection of each component in the system for optimum performance from an electrical, mechanical, and thermal …

The Hybridization Of A Graphene And Silicon Carbide Schottky Optoelectronic Device By The Incorporation Of A Lead Sulfide Quantum Dot Film, Joshua Letton

Theses and Dissertations

The work that follows examines the impact of lead sulfide quantum dots on a native epitaxial graphene (EG) SiC Schottky device, resulting in a hybrid optoelectronic device which presents a possible avenue towards a novel hybrid carbide-based Schottky solar cell. The active (n-type SiC) and contact (graphene) layers for the Schottky junction of the device were grown epitaxially using a novel technique incorporating tetrafluorosilane (TFS) as a precursor gas. The bare EG/SiC device was characterized based on its I-V behavior in dark and under illumination for both forward and reverse bias conditions. The initial characterization demonstrated the expected Schottky diode …

Simultaneous Ohmic Contacts To N And P-Type Silicon Carbide For Future Electric Vehicles, Hayden Hunter

Electrical Engineering Undergraduate Honors Theses

The paper explores possible metallization schemes to form simultaneous ohmic contacts to n-type and p-type silicon carbide contacts. Silicon carbide has shown promise in revolutionizing the power electronics market due to its increased switching speed, compact design, and higher temperature tolerance when compared to Silicon, the market standard. With the continuing development of silicon carbide technology, higher efficiency in future electric vehicles can be achieved by employing this new technology. This paper discusses theoretical contact formation between metals and semiconductors along with a proposed experiment to create a Ni/Al metallization scheme on both n and p-type contacts simultaneously on a …

Ohmic Contact Metallization For Silicon Carbide In Future Transportation And Aviation Systems, Tanner W. Rice

Electrical Engineering Undergraduate Honors Theses

This paper analyzes metallization stacks in both n-type and p-type used in Silicon Carbide to create Ohmic Contacts. Silicon Carbide has shown its significance in usage as a semiconductor in high temperatures, and other extreme environments compared to its silicon counterpart. Additionally, silicon carbide exhibits many other favorable attributes such as strong radiation hardness, high power capability, and high-temperature tolerance. These attributes translate into great components for use in aviation and other future transportations by increasing reliability in a sector that already requires high reliability. Applications of this material could prove useful in fields such as aviation, among others. This …

On The Control Of A Solid State Transformer For Multi-Mw Utility-Scale Pv-Battery Systems, Yibin Zhang, Oluwaseun M. Akeyo, Jiangbiao He, Dan M. Ionel

Power and Energy Institute of Kentucky Faculty Publications

The utility-scale photovoltaic (PV)-battery systems typically include multiple power converters connected to the grid via traditional line frequency transformers (LFT), which may be considered bulky, and inefficient when compared with the emerging solid state transformers (SST). This paper proposes a SST with power and voltage controls for utility-scale PV-battery systems. The PV system was modeled based on available data from a universal solar facility located in Kentucky, USA. Furthermore, this paper provides detailed controller designs for the proposed utility-scale PV-battery system based on a SST which includes: the PV-side dual-active bridge (DAB) converter tracks the maximum power point, the PV …

An Rs-485 Transceiver In A Silicon Carbide Cmos Process, Maria Raquel Benavides Herrera

Graduate Theses and Dissertations

This thesis presents the design, simulation and test results of a silicon carbide (SiC) RS-485 transceiver for high temperature applications. This circuit is a building block in the design and fabrication of a digital data processing and control system. Automation processes for extreme environments, remote connection to high temperature locations, deep earth drilling, and high temperature data acquisition are some of the potential applications for such a system. The transceiver was designed and developed in a 1.2 µm SiC-CMOS process by Raytheon Systems, Ltd. (UK). It has been tested with a supply voltage of 12 V and 15 V, temperatures …

A Folded Cascode Operational Amplifier With Wide-Swing Current Mirrors And High Icmr, Designed With A 1.2-Micron Silicon-Carbide Process, Austin Gattis

Electrical Engineering Undergraduate Honors Theses

This thesis describes in detail the process of designing, simulating, and creating the layout for a modified folded cascode op-amp, fabricated with silicon carbide MOSFETS. The modifications consist of using a wide-swing current mirror to help deal with output voltage issues stemming from high threshold voltages in the silicon carbide process, as well as using a modification that allows for an increased input common mode range. The folded cascode op-amp uses silicon carbide transistors, as it is intended to be used for high temperature applications, ideally in the 25 C - 300 C range. It is designed to have 25 …

Gating Methods For High-Voltage Silicon Carbide Power Mosfets, Audrey Dearien

Graduate Theses and Dissertations

The objective of this thesis is to assess the challenges associated with driving Silicon Carbide (SiC) power devices, and to compare the potential gate drive methods for these devices which address those challenges. SiC power devices present many benefits that make them suitable for next generation automotive, power utility grid, and energy management applications. High efficiency, increased power density, and reliability at high-temperatures are some of the main benefits of SiC technology. However, the many challenges associated with these devices have prevented their adoption into industry applications. The argument is made in this thesis that the gate driver is a …

A Silicon Carbide Power Management Solution For High Temperature Applications, Robert Murphree

Graduate Theses and Dissertations

The increasing demand for discrete power devices capable of operating in high temperature and high voltage applications has spurred on the research of semiconductor materials with the potential of breaking through the limitations of traditional silicon. Gallium nitride (GaN) and silicon carbide (SiC), both of which are wide bandgap materials, have garnered the attention of researchers and gradually gained market share. Although these wide bandgap power devices enable more ambitious commercial applications compared to their silicon-based counterparts, reaching their potential is contingent upon developing integrated circuits (ICs) capable of operating in similar environments.

The foundation of any electrical system is …

The Development Of Novel Interconnection Technologies For 3d Packaging Of Wire Bondless Silicon Carbide Power Modules, Sayan Seal

Graduate Theses and Dissertations

This dissertation advances the cause for the 3D packaging and integration of silicon carbide power modules. 3D wire bondless approaches adopted for enhancing the performance of silicon power modules were surveyed, and their merits were assessed to serve as a vision for the future of SiC power packaging. Current efforts pursuing 3D wire bondless SiC power modules were investigated, and the concept for a novel SiC power module was discussed. This highly-integrated SiC power module was assessed for feasibility, with a focus on achieving ultralow parasitic inductances in the critical switching loops. This will enable higher switching frequencies, leading to …

Design And Test Of A Gate Driver With Variable Drive And Self-Test Capability Implemented In A Silicon Carbide Cmos Process, Matthew Barlow

Graduate Theses and Dissertations

Discrete silicon carbide (SiC) power devices have long demonstrated abilities that outpace those of standard silicon (Si) parts. The improved physical characteristics allow for faster switching, lower on-resistance, and temperature performance. The capabilities unleashed by these devices allow for higher efficiency switch-mode converters as well as the advance of power electronics into new high-temperature regimes previously unimaginable with silicon devices. While SiC power devices have reached a relative level of maturity, recent work has pushed the temperature boundaries of control electronics further with silicon carbide integrated circuits.

The primary requirement to ensure rapid switching of power MOSFETs was a gate …

Plug-In Grid Compatible Next Generation Power Converters, Qianqian Jiao

Theses and Dissertations

The utilization of the DC low voltage distribution opens new possibilities for network development. Community DC microgrid is considered as an efficient solution for providing clean energy for residential areas. The connection of the DC microgrid to the AC utility grid would need a power electronic based rectifier. Voltage Source Rectifier (VSR) and Current Source Rectifier (CSR) are considered as the two options for such application. This study compares the two topologies based on their power density and efficiency. Silicon Carbide (SiC) switches are used for designing the rectifiers to get better power density and efficiency. The proximity of the …

8 Bit Split Array Based Charge Scaling Digital To Analog Converter With Rail To Rail Buffered Output, Sai Kiran Akula

Graduate Theses and Dissertations

This thesis presents the design, simulation and layout of a silicon carbide (SiC) 8 bit split array charge scaling digital to analog convertor (DAC). The converter consists of the charge scaling capacitor chain with two operational trans-conductance amplifiers (op amp) in voltage follower configuration. The op amps used in the design have the input common mode ranges of 0 to 11.2 V and 4.7V to 14.5V respectively. Additional logic circuit topologies are designed, which help to switch the op amps when needed to provide a rail to rail unity gain at the output. As the design is based on the …

Bidirectional Ac-Dc Converter For Vehicle-To-Grid (V2g) Applications, Arjun Raj Prabu Andhra Sridhar

Master's Theses (2009 -)

Electric vehicles are growing at a rapid pace in the internal combustion engine dominated transportation sector, and bring environmental and economic benefits to society. Electric vehicles produce nearly zero carbon emission, provided that they are charged through renewable energy sources. Electric vehicles reduce our dependency on foreign oil and also offer additional benefits like Vehicle-to-grid (V2G). V2G is a technology that allows electric energy stored in the electric vehicle batteries to be returned to the grid during peak demand. V2G can also provide voltage regulation, voltage shaving, reactive power compensation and distributed generation. This necessitates that an electric vehicle battery …

Analytical Loss Model For Power Converters With Sic Mosfet And Sic Schottky Diode Pair, Kang Peng

Kang Peng

Gallium Nitride: Analysis Of Physical Properties And Performance In High-Frequency Power Electronic Circuits, Dalvir K. Saini

Browse all Theses and Dissertations

Gallium nitride (GaN) technology is being adopted in a variety of power electronic applications due to their high efficiencies even at high switching speeds. In comparison with the silicon (Si) transistors, the GaN-based devices exhibit lower on-state resistance and parasitic capacitances. The thermal performance of the GaN transistors are also better than the Si counterparts due to their higher junction temperature and lower temperature-coefficient of on-resistance. These unique properties make the gallium-nitride power transistors an appropriate selection for power electronic converters and radio-frequency power amplifiers, where size, efficiency, power density, and dynamic performance are major requirements.

Foreseeing the immense capabilities …

A Phase-Locked Loop In High-Temperature Silicon Carbide And General Design Methods For Silicon Carbide Integrated Circuits, Paul Shepherd

Graduate Theses and Dissertations

Silicon carbide (SiC) has long been considered for integrated circuits (ICs). It offers several advantages, including wider temperature range, larger critical electric field, and greater radiation immunity with respect to Silicon (Si). At the same time, it suffers from challenges in fabrication consistency and lower transconductance which the designer must overcome. One of the recent SiC IC processes developed is the Raytheon High-Temperature Silicon Carbide (HTSiC) complementary MOSFET process. This process is one of the first to offer P channel MOSFETs and, as a result, a greater variety of circuits can be built in it.

The behavior of SiC MOSFETs …

Characterization And Testing Of A 5.8 Kv Sic Pin Diode For Electric Space Propulsion Applications, Alexandra Toftul

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Inductive Pulsed Plasma Thrusters (IPPTs) are a type of in-space propulsion that has multiple advantages over conventional chemical propulsion for long-duration, deep space missions. Existing IPPT prototypes utilize spark gap switches, however these are subject to corrosion problems that make them unreliable for long-term use. Recent advances in solid state switching technology have opened up a variety of switching options that could provide greater reliability, controllability, and increased energy efficiency. Taking advantage of this, a novel thruster drive circuit topology containing a high-power silicon controlled rectifier (SCR) and series fast recovery diode (FRD) is proposed that is expected to increase …

Modeling Of Sic Power Semiconductor Devices For Switching Converter Applications, Ruiyun Fu

Theses and Dissertations

Thanks to recent progress in SiC technology, SiC JFETs, MOSFETs and Schottky diodes are now commercially available from several manufactories such as Cree, GeneSiC and Infineon. SiC devices hold the promise of faster switching speed compared to Si devices, which can lead to superior converter performance, because the converter can operate at higher switching frequencies with acceptable switching losses, so that passive filter size is reduced. However, the ultimate achievable switching speed is determined not only by internal semiconductor device physics, but also by circuit parasitic elements. Therefore, in order to accurately predict switching losses and actual switching waveforms, including …

Stress-Strain Management Of Heteroepitaxial Polycrystalline Silicon Carbide Films, Christopher William Locke

USF Tampa Graduate Theses and Dissertations

Silicon carbide (SiC) is one of the hardest known materials and is also, by good fortune, a wide bandgap semiconductor. While the application of SiC for high-temperature and high-power electronics is fairly well known, its utility as a highly robust, chemically-inert material for microelectrical mechanical systems (MEMS) is only beginning to be well recognized. SiC can be grown on both native SiC substrates or on Si using heteroepitaxial growth methods which affords the possibility to use Si micromachining methods to fabricate advanced SiC MEMS devices.

The control of film stress in heteroepitaxial silicon carbide films grown on polysilicon-on-oxide substrates has …

Growth And Characterization Of Silicon Carbide Thin Films Using A Nontraditional Hollow Cathode Sputtering Technique, James Huguenin-Love

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Silicon carbide (SiC) is considered a suitable candidate for high-power, high-frequency devices due to its wide bandgap, high breakdown field, and high electron mobility. It also has the unique ability to synthesize graphene on its surface by subliming Si during an annealing stage. The deposition of SiC is most often carried out using chemical vapor deposition (CVD) techniques, but little research has been explored with respect to the sputtering of SiC.

Investigations of the thin film depositions of SiC from pulse sputtering a hollow cathode SiC target are presented. Although there are many different polytypes of SiC, techniques are discussed …

Silicon Carbide And Agile Optics Based Sensors For Power Plant Gas Turbines, Laser Beam Analysis And Biomedicine, Mumtaz Sheikh

Electronic Theses and Dissertations

Proposed are novel sensors for extreme environment power plants, laser beam analysis and biomedicine. A hybrid wireless-wired extreme environment temperature sensor using a thick single-crystal Silicon Carbide (SiC) chip embedded inside a sintered SiC probe design is investigated and experimentally demonstrated. The sensor probe employs the SiC chip as a Fabry-Perot (FP) interferometer to measure the change in refractive index and thickness of SiC with temperature. A novel temperature sensing method that combines wavelength-tuned signal processing for coarse measurements and classical FP etalon peak shift for fine measurements is proposed and demonstrated. This method gives direct unambiguous temperature measurements with …