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Modeling And Loss Analysis Of Wide Bandgap Power Semiconductor Devices, Kang Peng

Theses and Dissertations

In recent times, the development of high power density and high efficiency power converters has become critical in power electronics applications like electric vehicles, aircrafts, electric ships and so on. High-switching-frequency and high-temperature operation are required to achieve this target. However, these requirements are exceeding the theoretical material-related limits of silicon (Si) based devices. The emerging wide bandgap power semiconductor technology is a promising solution to meet these requirements. Silicon Carbide (SiC) and Gallium Nitride (GaN) are the most promising among all wide bandgap semiconductor materials. SiC and GaN have almost a three times larger bandgap (about 3eV), compared with …