Engineering Commons^™

Direct Torque Control For Silicon Carbide Motor Drives, Mohammad Hazzaz Mahmud

Graduate Theses and Dissertations

Direct torque control (DTC) is an extensively used control method for motor drives due to its unique advantages, e.g., the fast dynamic response and the robustness against motor parameters variations, uncertainties, and external disturbances. Using higher switching frequency is generally required by DTC to reduce the torque ripples and decrease stator current total harmonic distortion (THD), which however can lower the drive efficiency. Through the use of the emerging silicon carbide (SiC) devices, which have lower switching losses compared to their silicon counterparts, it is feasible to achieve high efficiency and low torque ripple simultaneously for DTC drives.

To overcome …

Memory Module Design For High-Temperature Applications In Sic Cmos Technology, Affan Abbasi

Graduate Theses and Dissertations

The wide bandgap (WBG) characteristics of SiC play a significant and disruptive role in the power electronics industry. The same characteristics make this material a viable choice for high-temperature electronics systems. Leveraging the high-temperature capability of SiC is crucial to automotive, space exploration, aerospace, deep well drilling, and gas turbines. A significant issue with the high-temperature operation is the exponential increase in leakage current. The lower intrinsic carrier concentration of SiC (10-9 cm-3) compared to Si (1010 cm-3) leads to lower leakage over temperature. Several researchers have demonstrated analog and digital circuits designed in SiC. However, a memory module is …

Design And Simulation Of Power Electronics Modules, Haonan Jia

Graduate Theses and Dissertations

Silicon carbide (SiC), a wide-bandgap semiconductor material, greatly improves the performance of power semiconductor devices. Its electrical characteristics have a positive impact on the size, efficiency, and weight of the power electronics systems. Parasitic circuit elements and thermal properties are critical to the power electronics module design. This thesis investigates the various aspects of layout design, electrical simulation, thermal simulation, and peripheral design of SiC power electronic modules. ANSYS simulator was used to design and simulate the power electronic modules. The parasitic circuit elements of the power module were obtained from the device parameters given in the datasheet of these …

Gating Methods For High-Voltage Silicon Carbide Power Mosfets, Audrey Dearien

Graduate Theses and Dissertations

The objective of this thesis is to assess the challenges associated with driving Silicon Carbide (SiC) power devices, and to compare the potential gate drive methods for these devices which address those challenges. SiC power devices present many benefits that make them suitable for next generation automotive, power utility grid, and energy management applications. High efficiency, increased power density, and reliability at high-temperatures are some of the main benefits of SiC technology. However, the many challenges associated with these devices have prevented their adoption into industry applications. The argument is made in this thesis that the gate driver is a …

Compact Modeling Of Sic Insulated Gate Bipolar Transistors, Sonia Perez

Graduate Theses and Dissertations

This thesis presents a unified (n-channel and p-channel) silicon/silicon carbide Insulated Gate Bipolar Transistor (IGBT) compact model in both MAST and Verilog-A formats. Initially, the existing MAST model mobility equations were updated using recently referenced silicon carbide (SiC) data. The updated MAST model was then verified for each device tested. Specifically, the updated MAST model was verified for the following IGBT devices and operation temperatures: n-channel silicon at 25 ˚C and at 125 ˚C; n-channel SiC at 25 ˚C and at 175 ˚C; and p-channel SiC at 150 ˚C and at 250 ˚C. Verification was performed through capacitance, DC output …