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A Phase-Locked Loop In High-Temperature Silicon Carbide And General Design Methods For Silicon Carbide Integrated Circuits, Paul Shepherd
A Phase-Locked Loop In High-Temperature Silicon Carbide And General Design Methods For Silicon Carbide Integrated Circuits, Paul Shepherd
Graduate Theses and Dissertations
Silicon carbide (SiC) has long been considered for integrated circuits (ICs). It offers several advantages, including wider temperature range, larger critical electric field, and greater radiation immunity with respect to Silicon (Si). At the same time, it suffers from challenges in fabrication consistency and lower transconductance which the designer must overcome. One of the recent SiC IC processes developed is the Raytheon High-Temperature Silicon Carbide (HTSiC) complementary MOSFET process. This process is one of the first to offer P channel MOSFETs and, as a result, a greater variety of circuits can be built in it.
The behavior of SiC MOSFETs …