Open Access. Powered by Scholars. Published by Universities.®
Electrical and Computer Engineering
Electrical and Computer Engineering Publications
YELLOW LUMINESCENCE; METASTABLE DEFECTS; FREESTANDING GAN; TEMPLATES; VACANCIES; EPITAXY
Articles 1 - 1 of 1
Full-Text Articles in Engineering
Two Charge States Of Dominant Acceptor In Unintentionally Doped Gan: Evidence From Photoluminescence Study, Michael A. Reshchikov, Hadis Morkoç, S. S. Park, K. Y. Lee
Two Charge States Of Dominant Acceptor In Unintentionally Doped Gan: Evidence From Photoluminescence Study, Michael A. Reshchikov, Hadis Morkoç, S. S. Park, K. Y. Lee
Electrical and Computer Engineering Publications
Photoluminescence of the dominant deep-level acceptor in high-purity freestanding GaN is studied over a wide range of excitation intensities. A yellow luminescence (YL) band at about 2.2 eV saturates with increasing excitation intensity, whereas a green luminescence (GL) band at about 2.5 eV increases as a square of the excitation intensity. The YL and GL bands are attributed to two charge states of the same defect, presumably a gallium vacancy-oxygen complex.