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Electrical and Computer Engineering
Department of Electrical and Computer Engineering Faculty Publications
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Full-Text Articles in Engineering
Metal–Insulator–Semiconductor Electrostatics Of Carbon Nanotubes, Jing Guo, Sebastien Goasguen, Mark S. Lundstrom, Supriyo Datta
Metal–Insulator–Semiconductor Electrostatics Of Carbon Nanotubes, Jing Guo, Sebastien Goasguen, Mark S. Lundstrom, Supriyo Datta
Department of Electrical and Computer Engineering Faculty Publications
Carbon nanotube metal-insulator-semiconductor capacitors are examined theoretically. For the densely packed array of nanotubes on a planar insulator, the capacitance per tube is reduced due to the screening of the charge on the gate plane by the neighboring nanotubes. In contrast to the silicon metal-oxide-semiconductor capacitors, the calculated C-VC-V curves reflect the local peaks of the one-dimensional density-of-states in the nanotube. This effect provides the possibility to use C-VC-V measurements to diagnose the electronic structures of nanotubes. Results of the electrostatic calculations can also be applied to estimate the upper-limit on-current of carbon nanotube field-effect transistors.
Performance Projections For Ballistic Carbon Nanotube Field-Effect Transistors, Jing Guo, Mark S. Lundstrom, Supriyo Datta
Performance Projections For Ballistic Carbon Nanotube Field-Effect Transistors, Jing Guo, Mark S. Lundstrom, Supriyo Datta
Department of Electrical and Computer Engineering Faculty Publications
The performance limits of carbon nanotube field-effect transistors (CNTFETs) are examined theoretically by extending a one-dimensional treatment used for silicon metal-oxide-semiconductor field-effect transistors (MOSFETs). Compared to ballistic MOSFETs, ballistic CNTFETs show similar I-VI-V characteristics but the channel conductance is quantized. For low-voltage, digital applications, the CNTFET with a planar gate geometry provides an on-current that is comparable to that expected for a ballistic MOSFET. Significantly better performance, however, could be achieved with high gate capacitance structures. Because the computed performance limits greatly exceed the performance of recently reported CNTFETs, there is considerable opportunity for progress in device performance.
A Drift-Diffusion Equation For Ballistic Transport In Nanoscale Metal-Oxide-Semiconductor Field Effect Transistors, Jung-Hoon Rhew, Mark S. Lundstrom
A Drift-Diffusion Equation For Ballistic Transport In Nanoscale Metal-Oxide-Semiconductor Field Effect Transistors, Jung-Hoon Rhew, Mark S. Lundstrom
Department of Electrical and Computer Engineering Faculty Publications
The performance limits of carbon nanotube field-effect transistors ~CNTFETs! are examined theoretically by extending a one-dimensional treatment used for silicon metal–oxide– semiconductor field-effect transistors ~MOSFETs!. Compared to ballistic MOSFETs, ballistic CNTFETs show similar I –V characteristics but the channel conductance is quantized. For low-voltage, digital applications, the CNTFET with a planar gate geometry provides an on-current that is comparable to that expected for a ballistic MOSFET. Significantly better performance, however, could be achieved with high gate capacitance structures. Because the computed performance limits greatly exceed the performance of recently reported CNTFETs, there is considerable opportunity for progress in device performance.
Simulating Quantum Transport In Nanoscale Mosfets: Real Vs. Mode Space Approaches, Rajesh Venugopal, Z. Ren, Supriyo Datta, Mark S. Lundstrom, D. Jovanovic
Simulating Quantum Transport In Nanoscale Mosfets: Real Vs. Mode Space Approaches, Rajesh Venugopal, Z. Ren, Supriyo Datta, Mark S. Lundstrom, D. Jovanovic
Department of Electrical and Computer Engineering Faculty Publications
The performance limits of carbon nanotube field-effect transistors (CNTFETs) are examined theoretically by extending a one-dimensional treatment used for silicon metal–oxide–semiconductor field-effect transistors (MOSFETs). Compared to ballistic MOSFETs, ballistic CNTFETs show similar I–VI–V characteristics but the channel conductance is quantized. For low-voltage, digital applications, the CNTFET with a planar gate geometry provides an on-current that is comparable to that expected for a ballistic MOSFET. Significantly better performance, however, could be achieved with high gate capacitance structures. Because the computed performance limits greatly exceed the performance of recently reported CNTFETs, there is considerable opportunity for progress in device performance.