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Electrical and Computer Engineering
Virginia Commonwealth University
P-I-N; SCHOTTKY-BARRIER; LOW-NOISE; GAN; ALGAN; PHOTODIODES; DETECTORS; FIELDS
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Full-Text Articles in Engineering
Backilluminated Ultraviolet Photodetector Based On Gan/Algan Multiple Quantum Wells, S. K. Zhang, W. B. Wang, F. Yun, L. He, Hadis Morkoç, X. Zhou, M. Tamargo, R. R. Alfano
Backilluminated Ultraviolet Photodetector Based On Gan/Algan Multiple Quantum Wells, S. K. Zhang, W. B. Wang, F. Yun, L. He, Hadis Morkoç, X. Zhou, M. Tamargo, R. R. Alfano
Electrical and Computer Engineering Publications
The operation of backilluminated ultraviolet (UV)photodetector based on GaN/Al0.27Ga0.73Nmultiple quantum wells(MQWs) is reported. The MQW structure was deposited on a 1-μm-thick Al0.35Ga0.65Nbuffer layer which was epitaxied on a sapphire substrate. Coplanar Ohmic contacts were made on the top side of the MQW structure. By illuminating the Ohmic contact positions from the backside of the detector, a flat and narrow band spectral response is achieved in the UV wavelength range from 297 nm to 352 nm. The electron-heavy hole absorption in the MQW region produces the sharp long-wavelength cutoff at 352 nm and the band-to-band absorption of the Al0.35Ga0.65Nbuffer layer introduces …