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Electrical and Computer Engineering
Virginia Commonwealth University
ION-SCATTERING SPECTROSCOPY; FACE ALGAN/GAN HETEROSTRUCTURES; 2-DIMENSIONAL ELECTRON GASES; VAPOR-PHASE-EPITAXY; WURTZITE GAN; LATTICE POLARITY; SINGLE-CRYSTALS; GAN(0001) FILM; SAPPHIRE; POLARIZATION
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Full-Text Articles in Engineering
Dependence Of Gan Polarity On The Parameters Of The Buffer Layer Grown By Molecular Beam Epitaxy, D. Huang, P. Visconti, K. M. Jones, Michael A. Reshchikov, F. Yun, A. A. Baski, T. King, Hadis Morkoç
Dependence Of Gan Polarity On The Parameters Of The Buffer Layer Grown By Molecular Beam Epitaxy, D. Huang, P. Visconti, K. M. Jones, Michael A. Reshchikov, F. Yun, A. A. Baski, T. King, Hadis Morkoç
Electrical and Computer Engineering Publications
The polarity of GaNfilmsgrown using GaN and AlNbuffer layers on sapphire substrates by molecular beam epitaxy were investigated by atomic force microscopy, hot wet chemical etching, and reflection high-energy electron diffraction. We found that the GaNfilmsgrown on high temperature AlN (>890 °C) and GaN (770–900 °C) buffer layers invariably show Ga and N polarity, respectively. However, the filmsgrown using low temperature (∼500 °C) buffer layers, either GaN or AlN, could have either Ga or N polarity, depending on the growth rate of the buffer layer.