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Recent Advances In Silicon Light Emitting Diodes, Aravind Balakrishnan
Recent Advances In Silicon Light Emitting Diodes, Aravind Balakrishnan
Theses
A silicon based light emitting diode (LED) is a new gateway for combining optoelectronics with CMOS integrated circuits. The choice of silicon is limited due to its indirect band gap nature. There are new approaches for improving emission efficiencies in Si-LED to nearly 1% at room temperature. Boron implantation has been employed to introduce dislocation array and as a p-type dopant to form p-n Junction in an n-type Si substrate. The device operates as a conventional LED under forward bias. The temperature dependence of radiative recombination rate is addressed by Varshni empirical formula. The difference between the energy at which …