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Light Sensor Platform Based On The Integration Of Bacteriorhodopsin With A Single Electron Transistor, Karl A. Walczak, Paul L. Bergstrom, Craig Richard Freidrich
Light Sensor Platform Based On The Integration Of Bacteriorhodopsin With A Single Electron Transistor, Karl A. Walczak, Paul L. Bergstrom, Craig Richard Freidrich
Department of Electrical and Computer Engineering Publications
This paper reports on the integration of an optical protein with single electron transistors to form a nano-bio-hybrid device for sensing. Bacteriorhodopsin (bR) is an optoelectric protein that translocates a proton across a distance of several nanometers in response to an absorbed photon of incident light. This charge gradient results in a measurable voltage in the dried state. Single electron transistors (SETs) have active regions consisting of one or more quantum islands with a size typically 10 nanometers or less. Integrating bacteriorhodopsin with the gate of a SET provides a device capable of a modulated electrical output in response to …
Room Temperature Operational Single Electron Transistor Fabricated By Focused Ion Beam Deposition, P. Santosh Kumar Karre, Paul Bergstrom
Room Temperature Operational Single Electron Transistor Fabricated By Focused Ion Beam Deposition, P. Santosh Kumar Karre, Paul Bergstrom
Department of Electrical and Computer Engineering Publications
We present the fabrication and room temperature operation of single electron transistors using 8nm8nmtungsten islands deposited by focused ion beamdeposition technique. The tunnel junctions are fabricated using oxidation of tungsten in peracetic acid. Clear Coulomb oscillations, showing charging and discharging of the nanoislands, are seen at room temperature. The device consists of an array of tunnel junctions; the tunnel resistance of individual tunnel junction of the device is calculated to be as high as 25.13GΩ25.13GΩ. The effective capacitance of the array of tunnel junctions was found to be 0.499aF0.499aF, giving a charging energy of 160.6meV160.6meV.