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Influence Of Al2o3 Passivation Layer Thickness On The Thermal Stability And Quality Of Mocvd-Grown Gan On Si, S M Atiqur Rahman, Manika Tun Nafisa, Zhe Chuan Feng, Benjamin Klein, Ian T. Ferguson
Influence Of Al2o3 Passivation Layer Thickness On The Thermal Stability And Quality Of Mocvd-Grown Gan On Si, S M Atiqur Rahman, Manika Tun Nafisa, Zhe Chuan Feng, Benjamin Klein, Ian T. Ferguson
Symposium of Student Scholars
This research delves into the significant impact of varying thicknesses of the Al2O3 passivation layer on the thermal stability and crystalline quality of GaN on Si structures, an essential aspect for the next generation of high-temperature electronic and optoelectronic devices. By adopting metal-organic chemical vapor deposition (MOCVD) for the growth process, we analyzed structures with different Al2O3 passivation layer thicknesses: none, 2 nm, 10 nm, and 20 nm, each built upon the GaN layer. Through Raman spectroscopy, we meticulously assessed the changes in the E2 (High) phonon mode's peak position and full width …