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Full-Text Articles in Engineering

Modeling All Spin Logic: Multi-Magnet Networks Interacting Via Spin Currents, Srikant Srinivasan Dec 2011

Modeling All Spin Logic: Multi-Magnet Networks Interacting Via Spin Currents, Srikant Srinivasan

Srikant Srinivasan

All-spin logic (ASL) represents a new approach to information processing where the roles of charges and capacitors in CMOS are played by spins and magnets. This paper (1) summarizes our earlier work on the input-output isolation and intrinsic directivity of ASL devices, (2) uses an experimentally benchmarked simulator for multimagnet networks coupled by spin transport channels to demonstrate a combinational NAND gate, and (3) describes the natural mapping of such ASL networks into neuromorphic circuits suitable for hybrid analog/digital information processing.


Efficient Database Generation For Decision Tree Based Power System Security Assessment, Venkat Krishnan Nov 2011

Efficient Database Generation For Decision Tree Based Power System Security Assessment, Venkat Krishnan

Venkat Kumar Krishnan

No abstract provided.


Lung Cancer Brachytherapy: Robotics-Assisted Minimally Invasive Approach, Edward Yu, Craig Lewis, Ana Trejos, Rajni Patel, Richard Malthaner Sep 2011

Lung Cancer Brachytherapy: Robotics-Assisted Minimally Invasive Approach, Edward Yu, Craig Lewis, Ana Trejos, Rajni Patel, Richard Malthaner

Edward Yu

New technological concepts have been evolving to manage the relative poor prognosis of lung cancer. Brachytherapy is becoming an option for both unresectable and early resectable lung cancer. Three-dimensional ultrasound (US) of lung tumours and image-guided minimally invasive robotics-assisted brachytherapy are feasible for dosimetry planning and management of lung tumours. The present article reviews the current knowledge of lung brachytherapy and discusses its potential in future management of lung cancer.


Integrating Thermodynamic And Observed-Frequency Data For Non-Coding Rna Gene Search, Jennifer Smith, Kay Wiese Aug 2011

Integrating Thermodynamic And Observed-Frequency Data For Non-Coding Rna Gene Search, Jennifer Smith, Kay Wiese

Jennifer A. Smith

Among the most powerful and commonly used methods for finding new members of non-coding RNA gene families in genomic data are covariance models. The parameters of these models are estimated from the observed position-specific frequencies of insertions, deletions, and mutations in a multiple alignment of known non-coding RNA family members. Since the vast majority of positions in the multiple alignment have no observed changes, yet there is no reason to rule them out, some form of prior is applied to the estimate. Currently, observed-frequency priors are generated from non-family members based on model node type and child node type allowing …


Efficient Non-Coding Rna Gene Searches Through Classical And Evolutionary Methods, Jennifer Smith Aug 2011

Efficient Non-Coding Rna Gene Searches Through Classical And Evolutionary Methods, Jennifer Smith

Jennifer A. Smith

Successful non-coding RNA gene searching requires examination of long-range intramolecular base pairing possibilities. This results in search algorithms with extremely long run times such that large-scale use of the algorithms often becomes computationally infeasible. Methods for the efficient search of the solution space are examined. A review of the standard dynamic-programming covariance model search algorithm is given. An analysis of the statistically probable regions of the search space is undertaken and a method of limiting the traditional dynamic-programming algorithm to this region is shown. An alternative search method using a Genetic Algorithm (GA) which favours the probable region of the …


Purely Electronic Switching With High Uniformity, Resistance Tunability, And Good Retention In Pt-Dispersed Sio2 Thin Films For Reram, Albert Chen Jun 2011

Purely Electronic Switching With High Uniformity, Resistance Tunability, And Good Retention In Pt-Dispersed Sio2 Thin Films For Reram, Albert Chen

Albert B Chen

Resistance switching memory operating by a purely electronic switching mechanism, which was first realized in Pt-dispersed SiO2 thin films, satisfies criteria including high uniformity, fast switching speed, and long retention for non-volatile memory application. This resistive element obeys Ohm's law for the area dependence, but its resistance exponentially increases with the film thickness, which provides new freedom to tailor the device characteristics.


Direct Measurement Of Graphene Adhesion On Silicon Surface By Intercalation Of Nanoparticles, Zong Zong, Chia-Ling Chen, Mehmet Dokmeci, Kai-Tak Wan Jun 2011

Direct Measurement Of Graphene Adhesion On Silicon Surface By Intercalation Of Nanoparticles, Zong Zong, Chia-Ling Chen, Mehmet Dokmeci, Kai-Tak Wan

Mehmet R. Dokmeci

We report a technique to characterize adhesion of monolayered/multilayered graphene sheets on silicon wafer. Nanoparticles trapped at graphene-silicon interface act as point wedges to support axisymmetric blisters. Local adhesion strength is found by measuring the particle height and blister radius using a scanning electron microscope. Adhesion energy of the typical graphene-silicon interface is measured to be 151±28 mJ/m2. The proposed method and our measurements provide insights in fabrication and reliability of microelectromechanical/nanoelectromechanical systems.


Low-Voltage And Short-Channel Pentacene Field-Effect Transistors With Top-Contact Geometry Using Parylene-C Shadow Masks, Yoonyoung Chung, Boris Murmann, Selvapraba Selvarasah, Mehmet Dokmeci, Zhenan Bao Jun 2011

Low-Voltage And Short-Channel Pentacene Field-Effect Transistors With Top-Contact Geometry Using Parylene-C Shadow Masks, Yoonyoung Chung, Boris Murmann, Selvapraba Selvarasah, Mehmet Dokmeci, Zhenan Bao

Mehmet R. Dokmeci

We have fabricated high-performance top-contact pentacene field-effect transistors using a nanometer-scale gate dielectric and parylene-C shadow masks. The high-capacitance gate dielectric, deposited by atomic layer deposition of aluminum oxide, resulted in a low operating voltage of 2.5 V. The flexible and conformal parylene-C shadow masks allowed fabrication of transistors with channel lengths of L = 5, 10, and 20 μm. The field-effect mobility of the transistors was μ = 1.14 (±0.08) cm²/V s on average, and the IMAX/IMIN ratio was greater than 10⁶.


Analysis Of Electroluminescence Spectra Of Silicon And Gallium Arsenide P-N Junctions In Avalanche Breakdown, M Lahbabi, A Ahaitoufa, M. Fliyou, E. Abarkan, J.-P. Charles, A. Bath, A. Hoffmann, Sherra Kerns, David Kerns, Jr. Jun 2011

Analysis Of Electroluminescence Spectra Of Silicon And Gallium Arsenide P-N Junctions In Avalanche Breakdown, M Lahbabi, A Ahaitoufa, M. Fliyou, E. Abarkan, J.-P. Charles, A. Bath, A. Hoffmann, Sherra Kerns, David Kerns, Jr.

David V. Kerns

We present a generalized study of light emission from reverse biased p–n junctions under avalanche breakdown conditions. A model is developed based on direct and indirect interband processes including self-absorption to describe measured electroluminescence spectra. This model was used to analyze experimental data for silicon (Si) and gallium arsenide p–n junctions and can be extended to several types of semiconductors regardless of their band gaps. This model can be used as a noninvasive technique for the determination of the junction depth. It has also been used to explain the observed changes of the Si p–n junction electroluminescence spectra after fast …


Unidirectional Information Transfer With Cascaded All Spin Logic Devices: A Ring Oscillator, Srikant Srinivasan Jun 2011

Unidirectional Information Transfer With Cascaded All Spin Logic Devices: A Ring Oscillator, Srikant Srinivasan

Srikant Srinivasan

The authors have presented the first simulator that simultaneously describes magnetization dynamics as well as spin transport in multi-magnet ASL networks and used it to demonstrate the possibility of large scale functional spin logic blocks through the example of an All Spin ring oscillator.


Separation Modes In Microcontacts Identified By The Rate Dependence Of The Pull-Off Force, L. Chen, Nicol Mcgruer, George Adams, Yan Du May 2011

Separation Modes In Microcontacts Identified By The Rate Dependence Of The Pull-Off Force, L. Chen, Nicol Mcgruer, George Adams, Yan Du

Nicol E. McGruer

We report the observation of two distinct modes of rate-dependent behavior during contact cycling tests. One is a higher pull-off force at low cycling rates and the other is a higher pull-off force at high cycling rates. Subsequent investigation of these contacts using scanning electron microscopy (SEM) demonstrates that these two rate-dependent modes can be related to brittle and ductile separation modes. The former behavior is indicative of brittle separation, whereas the latter accompanies ductile separation. Thus by monitoring the rate dependence of the pull-off force, the type of separation mode can be identified during cycling without interrupting the test …


Parallel Arrays Of Individually Addressable Single-Walled Carbon Nanotube Field-Effect Transistors, Sarah Lastella, Govind Mallick, Raymond Woo, Shashi Karna, David Rider, Ian Manners, Yung-Joon Jung, Chang Ryu, Pulickel Ajayan May 2011

Parallel Arrays Of Individually Addressable Single-Walled Carbon Nanotube Field-Effect Transistors, Sarah Lastella, Govind Mallick, Raymond Woo, Shashi Karna, David Rider, Ian Manners, Yung-Joon Jung, Chang Ryu, Pulickel Ajayan

Yung Joon Jung

High-throughput field-effect transistors (FETs) containing over 300 disentangled, high-purity chemical-vapor-deposition-grown single-walled carbon nanotube (SWNT) channels have been fabricated in a three-step process that creates more than 160 individually addressable devices on a single silicon chip. This scheme gives a 96% device yield with output currents averaging 5.4 mA and reaching up to 17 mA at a 300 mV bias. Entirely semiconducting FETs are easily realized by a high current selective destruction of metallic tubes. The excellent dispersity and nearly-defect-free quality of the SWNT channels make these devices also useful for nanoscale chemical and biological sensor applications.


Correlation Between Texture, Anisotropy, And Vector Magnetization Processes Investigated By Two-Dimensional Vector Vibrating Sample Magnetometry In Bao(Fe₂O₃)₆ Thin Film, Paul Ohodnicki, K. Goh, Michael Mchenry, Katherine Ziemer, Zhaohui Chen, C. Vittoria, Vincent Harris (1962-) Apr 2011

Correlation Between Texture, Anisotropy, And Vector Magnetization Processes Investigated By Two-Dimensional Vector Vibrating Sample Magnetometry In Bao(Fe₂O₃)₆ Thin Film, Paul Ohodnicki, K. Goh, Michael Mchenry, Katherine Ziemer, Zhaohui Chen, C. Vittoria, Vincent Harris (1962-)

Vincent G. Harris

High ferromagnetic resonance frequencies and low linewidths in BaO(Fe₂O₃)₆ thin films are achieved by obtaining a low-dispersion of crystallite easy c axes normal to the film. X-ray diffraction and magnetic force microscopy are used to characterize texture and magnetic domain structure for a BaO(Fe₂O₃)₆ film deposited on (0001) SiC with a MgO (111) template layer. Strong c-axis texture normal to the film is observed resulting in strong uniaxial anisotropy. The consequent vector magnetization processes due to a combination of domain wall motion and magnetization rotation are characterized by two dimensional vector coil vibrating sample magnetometry (VVSM).


Ba-Hexaferrite Films For Next Generation Microwave Devices, Vincent Harris (1962-), Zhaohui Chen, Yajie Chen, Soack Yoon, Tomokuza Sakai, Anton Geiler, Aria Yang, Yongxue He, Katherine Ziemer, Nian Sun, C. Vittoria Apr 2011

Ba-Hexaferrite Films For Next Generation Microwave Devices, Vincent Harris (1962-), Zhaohui Chen, Yajie Chen, Soack Yoon, Tomokuza Sakai, Anton Geiler, Aria Yang, Yongxue He, Katherine Ziemer, Nian Sun, C. Vittoria

Vincent G. Harris

Next generation magnetic microwave devices require ferrite films to be thick (>300 μm), self-biased (high remanent magnetization), and low loss in the microwave and millimeter wave bands. Here we examine recent advances in the processing of thick Ba-hexaferrite (M-type) films using pulsed laser deposition (PLD), liquid-phase epitaxy, and screen printing. These techniques are compared and contrasted as to their suitability for microwave materials processing and industrial production. Recent advances include the PLD growth of BaM on wide-band-gap semiconductor substrates and the development of thick, self-biased, low-loss BaM films by screen printing.


Activity-Aware Mental Stress Detection Using Physiological Sensors, Feng-Tso Sun, Cynthia Kuo, Heng-Tze Cheng, Senaka Buthpitiya, Patricia Collins, Martin Griss Jan 2011

Activity-Aware Mental Stress Detection Using Physiological Sensors, Feng-Tso Sun, Cynthia Kuo, Heng-Tze Cheng, Senaka Buthpitiya, Patricia Collins, Martin Griss

Martin L Griss

"Continuous stress monitoring may help users better understand their stress patterns and provide physicians with more reliable data for interventions. Previously, studies on mental stress detection were limited to a laboratory environment where participants generally rested in a sedentary position. However, it is impractical to exclude the effects of physical activity while developing a pervasive stress monitoring application for everyday use. The physiological responses caused by mental stress can be masked by variations due to physical activity. We present an activity-aware mental stress detection scheme. Electrocardiogram (ECG), galvanic skin response (GSR), and accelerometer data were gathered from 20 participants across …


Switching Energy-Delay Of All Spin Logic Devices, Srikant Srinivasan Dec 2010

Switching Energy-Delay Of All Spin Logic Devices, Srikant Srinivasan

Srikant Srinivasan

A recent proposal called all spin logic (ASL) proposes to store information in nanomagnets that communicate with spin currents in order to construct spin based digital circuits. We present a coupled magnetodynamics/spin-transport model for ASL devices that is based on established physics and is benchmarked against available experimental data. This model is used to show the linear dependence of switching energy and quadratic dependence of energy-delay of ASL devices on the number of Bohr magnetons comprising a nanomagnet. A scaling scheme that could lower the energy-delay of spin-torque switching while maintaining thermal stability is discussed.