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David V. Kerns

Circuits

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Single-Event Charge Enhancement In Soi Devices, David Kerns, Sherra Kerns, L Massengill, M Alles Apr 2012

Single-Event Charge Enhancement In Soi Devices, David Kerns, Sherra Kerns, L Massengill, M Alles

David V. Kerns

Studies are presented of single-particle ion effects in body-tied CMOS/silicon-on-insulator (SOI) devices. It is shown that two mechanisms can contribute to SOI soft-error rates: a direct ion-induced photocurrent and a local lateral bipolar current. The total amount of charge collected is sensitive to the relative locations of the ion strike and the body-to-source tie.

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