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Assessing Impact Of Exposure To Cyberphysical Systems On Student Interest In Information Technology Careers, Mayari I. Serrano Anazco
Assessing Impact Of Exposure To Cyberphysical Systems On Student Interest In Information Technology Careers, Mayari I. Serrano Anazco
Purdue Polytechnic Masters Theses
The main purpose of this project is to determine if the use of Information Technology (IT) tools, specifically cyberphysical devices, in outreach sessions will promote interest of young individuals in pursuing IT careers. The Diversity office of Purdue’s College of Technology offers a number of outreach sessions to a variety of target populations throughout the year. Each department in the college has an opportunity to present a session related to a field of study offered by the department. The research was carried out thru the Spring 2015 semester during the DOiT and Vision outreach programs offered through the college’s Diversity …
Multiferroic Tunnel Junctions And Ferroelectric Control Of Magnetic State At Interface, Y. W. Yin, M. Raju, W. J. Hu, John D. Burton, Y.-M. Kim, A. Y. Borisevich, S. J. Pennycook, S. M. Yang, T. W. Noh, Alexei Gruverman, X. G. Li, Z. D. Zhang, Evgeny Y. Tsymbal, Qi Li
Multiferroic Tunnel Junctions And Ferroelectric Control Of Magnetic State At Interface, Y. W. Yin, M. Raju, W. J. Hu, John D. Burton, Y.-M. Kim, A. Y. Borisevich, S. J. Pennycook, S. M. Yang, T. W. Noh, Alexei Gruverman, X. G. Li, Z. D. Zhang, Evgeny Y. Tsymbal, Qi Li
Alexei Gruverman Publications
As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. Here, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magnetoelectric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed …