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Full-Text Articles in Engineering
Fracture Toughness And Fatigue Crack Growth Rate Characterization Of Inconel 718 Formed By Laser Powder Bed Fusion, Charles C. Hohnbaum
Fracture Toughness And Fatigue Crack Growth Rate Characterization Of Inconel 718 Formed By Laser Powder Bed Fusion, Charles C. Hohnbaum
Theses and Dissertations
Continuing improvement in the field of AM of metals provides the opportunity for direct fabrication of aerospace parts. AM was once used in large part for rapid prototyping but improvements in technology and increases in the knowledge base of AM materials has provided the opportunity for manufacture of AM parts for operational use. The ability to create low numbers of unique parts without having to invest in expensive tooling provides great economic incentive to utilize this technique. IN718 is the most common high temperature alloy used in the aerospace industry and lends itself readily to formation by LPBF. The superior …
Combinatorial Computational Chemistry Approach To The Design Of Metal Oxide Electronics Materials, B. Rodion, Salai Ammal, Y. Inaba, Y. Oumi, S. Takami, M. Kubo, A. Miyamoto, M. Kawasaki, M. Yoshimoto, H. Koinuma
Combinatorial Computational Chemistry Approach To The Design Of Metal Oxide Electronics Materials, B. Rodion, Salai Ammal, Y. Inaba, Y. Oumi, S. Takami, M. Kubo, A. Miyamoto, M. Kawasaki, M. Yoshimoto, H. Koinuma
Salai C. Ammal
Combinatorial chemistry has been developed as an experimental method where it is possible to synthesize hundreds of samples all at once and examine their properties. Recently, we introduced the concept of combinatorial approach to computational chemistry for material design and proposed a new method called `a combinatorial computational chemistry'. In this approach, the effects of large number of dopants, substrates, and buffer layers on the structures, electronic states, and properties of metal oxide electronics material is estimated systematically using computer simulations techniques, in order to predict the best dopant, substrate, and buffer layer for each metal oxide electronics materials.