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Transfer Of Electric Power In Hetero-Structure N-Gaas−P-(Gaas)1−X(Znse)X(0 ≤ X ≤ 0.80), Sh.N Usmonov, K.G Gaimnazarov
Transfer Of Electric Power In Hetero-Structure N-Gaas−P-(Gaas)1−X(Znse)X(0 ≤ X ≤ 0.80), Sh.N Usmonov, K.G Gaimnazarov
Bulletin of Gulistan State University
Epitaxial layers of stable hard mixture of (GaAs)1-x(ZnSe)x of p–type condition and nGaAs sublayers were grown up by using method of liquid-phase epitaxy from limited volume of basic mixture. Characteristics of VAC hetero-structures n-GaAs–p-(GaAs)1-x(ZnSe)x (0x 0.80). Basing on double-model of ingection for n-p-p+- structures under condition of minimal spread of concentration of unstable bases, it is possible to explain experimentally the whole period of VAC for hetero-structures n-GaAs–p-(GaAs)1-x(ZnSe)x (0 x 0.80).
Transfer Of Electric Power In Hetero-Structure N-Gaas−P-(Gaas)1−X(Znse)X(0 ≤ X ≤ 0.80), Sh.N Usmonov, K.G Gaimnazarov
Transfer Of Electric Power In Hetero-Structure N-Gaas−P-(Gaas)1−X(Znse)X(0 ≤ X ≤ 0.80), Sh.N Usmonov, K.G Gaimnazarov
Bulletin of Gulistan State University
Epitaxial layers of stable hard mixture of (GaAs)1-x(ZnSe)x of p–type condition and nGaAs sublayers were grown up by using method of liquid-phase epitaxy from limited volume of basic mixture. Characteristics of VAC hetero-structures n-GaAs–p-(GaAs)1-x(ZnSe)x (0x 0.80). Basing on double-model of ingection for n-p-p+- structures under condition of minimal spread of concentration of unstable bases, it is possible to explain experimentally the whole period of VAC for hetero-structures n-GaAs–p-(GaAs)1-x(ZnSe)x (0 x 0.80).
Transfer Of Electric Power In Hetero-Structure N-Gaas−P-(Gaas)1−X(Znse)X(0 ≤ X ≤ 0.80), Sh.N Usmonov, K.G Gaimnazarov
Transfer Of Electric Power In Hetero-Structure N-Gaas−P-(Gaas)1−X(Znse)X(0 ≤ X ≤ 0.80), Sh.N Usmonov, K.G Gaimnazarov
Bulletin of Gulistan State University
Epitaxial layers of stable hard mixture of (GaAs)1-x(ZnSe)x of p–type condition and nGaAs sublayers were grown up by using method of liquid-phase epitaxy from limited volume of basic mixture. Characteristics of VAC hetero-structures n-GaAs–p-(GaAs)1-x(ZnSe)x (0x 0.80). Basing on double-model of ingection for n-p-p+- structures under condition of minimal spread of concentration of unstable bases, it is possible to explain experimentally the whole period of VAC for hetero-structures n-GaAs–p-(GaAs)1-x(ZnSe)x (0 x 0.80).