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Design And Development Of A Silicon Carbide Chemical Vapor Deposition Reactor, Matthew T. Smith

USF Tampa Graduate Theses and Dissertations

The goal of this thesis is to present the design and development of a chemical vapor deposition reactor for the growth of high quality homoepitaxy silicon carbide films for electronic device applications. The work was performed in the Nanomaterials and Nanomanufacturing Research Center at the University of South Florida from 8/2001-5/2003.

Chemical vapor deposition (CVD) is the technique of choice for SiC epitaxial growth. Epitaxial layers are the building blocks for use in various semiconductor device applications. This thesis reports on a SiC epitaxy process where a carrier gas (hydrogen) is saturated with reactive precursors (silane and propane) which are …

Cvd Growth Of Sic On Novel Si Substrates, Rachael L. Myers

USF Tampa Graduate Theses and Dissertations

Silicon Carbide has been a semiconductor material of interest as a high power and temperature replacement for Silicon (Si) in harsh environments due to the higher thermal conductivity and chemical stability of SiC. The cost, however, to produce this material is quite high. There are also defects in the substrate material (SiC) that penetrate into the active devices layers which are known device killers. Silicon is a material that provides a low cost substrate material for epitaxial growth and does not contain the defects that SiC substrates have. However, the large (~22%) lattice mismatch between Si and SiC creates dislocations …