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Articles 9271 - 9300 of 9458
Full-Text Articles in Entire DC Network
Improved Fungicide Spraying For Wheat/Barley Head Scab Control, Marcia Mcmullen, Jim Moos
Improved Fungicide Spraying For Wheat/Barley Head Scab Control, Marcia Mcmullen, Jim Moos
ER Series – Extension Reports
No abstract provided.
Introduction: The Dimensions Of Technological Change, Henry T. King Jr.
Introduction: The Dimensions Of Technological Change, Henry T. King Jr.
Canada-United States Law Journal
The Impact of Technological Change in the Canada/U.S. Context
People Aspects Of Technological Change: Immigration Issues, Labor Mobility, The Brain Drain, And R&D--A U.S. Perspective, James D. Van Erden
People Aspects Of Technological Change: Immigration Issues, Labor Mobility, The Brain Drain, And R&D--A U.S. Perspective, James D. Van Erden
Canada-United States Law Journal
The Impact of Technological Change in the Canada/U.S. Context
Introduction: Raising Venture Capital Aspects Of Technological Change, James Mcilroy
Introduction: Raising Venture Capital Aspects Of Technological Change, James Mcilroy
Canada-United States Law Journal
The Impact of Technological Change in the Canada/U.S. Context
Discussion Following The Remarks Of Mr. Wainwright, Discussion
Discussion Following The Remarks Of Mr. Wainwright, Discussion
Canada-United States Law Journal
The Impact of Technological Change in the Canada/U.S. Context
Protecting And Exploiting U.S. And Canadian Intellectual Property Abroad On A Global Basis In A Technologically Changing World--A Canadian Perspective, T. Gary O'Neill
Protecting And Exploiting U.S. And Canadian Intellectual Property Abroad On A Global Basis In A Technologically Changing World--A Canadian Perspective, T. Gary O'Neill
Canada-United States Law Journal
The Impact of Technological Change in the Canada/U.S. Context
Public Dimension Of Technological Change: Impact On The Media, The Citizenry, And Governments--A U.S. Perspective, The, Christopher T. Hill
Public Dimension Of Technological Change: Impact On The Media, The Citizenry, And Governments--A U.S. Perspective, The, Christopher T. Hill
Canada-United States Law Journal
The Impact of Technological Change in the Canada/U.S. Context
Raising Venture Capital Aspects Of Technological Change--A Canadian Perspective, Denzil Doyle
Raising Venture Capital Aspects Of Technological Change--A Canadian Perspective, Denzil Doyle
Canada-United States Law Journal
The Impact of Technological Change in the Canada/U.S. Context
Calibrating The Electronic Scales: Tipping The Balance In Favour Of A Vigorous And Competitive Electronic Market For Consumers, Nicole Ladouceur
Calibrating The Electronic Scales: Tipping The Balance In Favour Of A Vigorous And Competitive Electronic Market For Consumers, Nicole Ladouceur
Canada-United States Law Journal
The Impact of Technological Change in the Canada/U.S. Context
Technological Change And Canada/U.S. Regulatory Models For Information, Communications, And Entertainment, Ronald G. Atkey
Technological Change And Canada/U.S. Regulatory Models For Information, Communications, And Entertainment, Ronald G. Atkey
Canada-United States Law Journal
The Impact of Technological Change in the Canada/U.S. Context
Discussion Following The Remarks Of Mr. Allen, Discussion
Discussion Following The Remarks Of Mr. Allen, Discussion
Canada-United States Law Journal
The Impact of Technological Change in the Canada/U.S. Context
2001: A Global Odyssey Prompted By The Merritt-Cihon Upper Level Curriculum Report Of The Aals, Kenneth M. Casebeer
2001: A Global Odyssey Prompted By The Merritt-Cihon Upper Level Curriculum Report Of The Aals, Kenneth M. Casebeer
University of Miami Inter-American Law Review
No abstract provided.
Statistical Physics, Neural Networks, Brain Studies, Gerard Toulouse
Statistical Physics, Neural Networks, Brain Studies, Gerard Toulouse
Turkish Journal of Physics
An overview of some aspects of a vast domain, located at the crossroads of physics, biology and computer science is presented: 1) During the last fifteen years, physicists advancing along various pathways have come into contact with biology (computational neurosciences) and engineering (formal neural nets). 2) This move may actually be viewed as one component in a larger picture. A prominent trend of recent years, observable over many countries, has been the establishment of interdisciplinary centers devoted to the study of: cognitive sciences; natural and artificial intelligence; brain, mind and behaviour; perception and action; learning and memory; robotics; man-machine communication, …
The Renormalization-Group Microscope: The Local Statistical Mechanics Of Heterogeneous Systems, Dicle Yeşi̇lleten, A. Nihat Berker
The Renormalization-Group Microscope: The Local Statistical Mechanics Of Heterogeneous Systems, Dicle Yeşi̇lleten, A. Nihat Berker
Turkish Journal of Physics
Renormalization-group theory is developed to yield all local microscopic thermodynamic densities in heterogeneous systems. Local energy densities and local magnetizations are thus obtained for random-bond systems, random-field systems, and spin-glasses, in two and three dimensions. Different order-disorder mechanisms in these diverse systems, such as chaotic ordering and domain-wall melting, become quantitatively evident.
Fundamental Research And Device Technology, B. K. Ridley
Fundamental Research And Device Technology, B. K. Ridley
Turkish Journal of Physics
Highlights of the interaction between fundamental research and semiconductor device technology are summarized.
Electron Transport In Gaas Quantum Wells: Effect Of Interface Roughness Scatterin, Rita Gupta
Electron Transport In Gaas Quantum Wells: Effect Of Interface Roughness Scatterin, Rita Gupta
Turkish Journal of Physics
The importance of interface roughness (IFR) scattering of electrons and LO-phonons for electron transport in semiconductor quantum wells is discussed. Modulation doping of quantum wells minimizes the effect of impurity scattering on the low-field electron mobility so that IFR scattering of electrons in the well becomes the major limiting factor. A model calculation of IFR scattering of electrons in quantum wells is presented and it is shown that (both)\Lambda and \Delta, the parameters defining IFR, can be estimated by comparing the theoretical and experimental electron mobilities. The application of high electric field leads to a distribution of hot electrons which …
Feasibility Of The Gainp/Ingaas/Gaas System For Modulation Doped Field-Effect Transistors, C. Besi̇kci̇, Y. Ci̇van
Feasibility Of The Gainp/Ingaas/Gaas System For Modulation Doped Field-Effect Transistors, C. Besi̇kci̇, Y. Ci̇van
Turkish Journal of Physics
Si-doped single Ga_{0.51}In_{0.49}P layers and GaInP/InGaAs/GaAs modulation doped field-effect transistor structures grown by gas source molecular beam epitaxy were characterized in detail through Hall-Effect and Deep Level Transient Spectroscopy techniques. Electrical characterization of the undoped and moderately Si-doped (N_D = 3 x 10^{17} cm^{-3}) GaInP layers yielded an electron trap with an activation energy of 0.75 eV and a temperature dependent capture cross section with a capture barrier of 0.593 eV showing DX center properties. The trap was not detected in highly Si doped (N_D = 4 x 10^{18} cm^{-3}) as grown layers suggesting that it is a defect complex …
Silicon-Based Optoelectronics: Progress And Challenges, Tamim P. Sidiki, Clivia M. Sotomayor Torres
Silicon-Based Optoelectronics: Progress And Challenges, Tamim P. Sidiki, Clivia M. Sotomayor Torres
Turkish Journal of Physics
We review the status of silicon-based optoelectronics with emphasis on light emitting diodes. Erbium-doped Si, por-Si and silicon-based superlattices and nanostructures are discussed. The origin behind light emission in silicon with feature sizes below about 60 nm still remains poorly understood.
3 \Mu M Intersubband Quantum Well Photodetector (Qwip), Rita Gupta, A. L. Y. Wong, S. K. Haywood
3 \Mu M Intersubband Quantum Well Photodetector (Qwip), Rita Gupta, A. L. Y. Wong, S. K. Haywood
Turkish Journal of Physics
In recent years photodetectors operating in the mid- to far infrared region of 3-15 \mu m have been designed based on electron and hole intersubband transitions in multiple quantum wells and superlattices. In general, QWIPs based on electron transitions show greater detectivity compared to the hole-based photodetectors. However, selection rules for electron intersubband transitions usually forbid the TE mode operation, associated with normal light incidence; Therefore, special coupling structures/geometries have been employed to couple light into the device. The spectral region 3-5 \mu m is of interest for a variety of applications such as environmental gas sensing, thermal imaging etc. …
Hellish-Vcsel: A Hot Electron Laser, A. Obrien-Davies, N. Balkan, A. Boland-Thoms, M. J. Adams, J. Roberts
Hellish-Vcsel: A Hot Electron Laser, A. Obrien-Davies, N. Balkan, A. Boland-Thoms, M. J. Adams, J. Roberts
Turkish Journal of Physics
Hot Electron Light emission and Lasing In Semiconductor Heterostructures (HEL-LISH-1) is a novel hot electron surface emitter consisting of a GaAs QW on the n side of an Ga_{1-x}Al_xAs p-n junction. It utilises hot electron transport parallel to the junction plane. The injection of hot electron hole pairs into the QW is achieved via tunnelling and thermionic emission processes. Recently this structure has been modified by the incorporation of an upper and lower DBR defining a VCSEL (HELLISH-VCSEL). This has been shown to lase at room temperature with a Full Width at Half Maximum (FWHM) of 1.5 nm. In this …
The Effect Of Non-Equilibrium Acoustic Phonons On The Tunnel Current In Gaas/Alas Superlattices, S. A. Cavill, F. F. Ouali, L. J. Challis, A. J. Kent, M. Henini, A. V. Akimov
The Effect Of Non-Equilibrium Acoustic Phonons On The Tunnel Current In Gaas/Alas Superlattices, S. A. Cavill, F. F. Ouali, L. J. Challis, A. J. Kent, M. Henini, A. V. Akimov
Turkish Journal of Physics
We present the first study of the effect of ballistic acoustic phonons generated by a heated metal film on the tunnel current in GaAs/AlAs superlattices. The phonon-induced increase of the tunnel current as a function of applied voltage has a maximum at a voltage that varies linearly with heater temperature both in zero and applied magnetic field. The behaviour is consistent with phonon-assisted tunnelling by stimulated phonon emission. The system acts as a phonon spectrometer in the < 1THz frequency region with a resolution of approximately 200 GHz.
Carrier Transport And Band Offsets In Two Dimensional Heterostructures, Hi̇lmi̇ Ünlü
Carrier Transport And Band Offsets In Two Dimensional Heterostructures, Hi̇lmi̇ Ünlü
Turkish Journal of Physics
Advances in the low dimensional heterojunction device technology cannot be complete without adequate and reliable analytic model for determining interface properties such as band offsets needed to study the carrier transport and to evaluate the device performance at high temperatures and pressures. In this article, using the extended universal tight binding model of semiconductors, a new way of determining the band offsets in heterostructures is presented. In this model the band offsets are first determined by aligning the vacuum level, defined relative to valence band maximum which is screened by optical dielectric constant of semiconductors, at the interface at absolute …
Influence Of Electrical Field On Pulsed Laser Beam Welding Of Stainless Steel (304), Salah A. H. Fawzi̇, Raz N. Ari̇f
Influence Of Electrical Field On Pulsed Laser Beam Welding Of Stainless Steel (304), Salah A. H. Fawzi̇, Raz N. Ari̇f
Turkish Journal of Physics
Pulsed laser beam welding experiment were carried out on stainless steel (SUS 304), using vertical and horizontal electric fields of different intensities to study its effectiveness on the welding process, regarding depth and weld quality. Pulsed Nd: YAG laser emitting 10 ms pulses in the TEM_{00} mode at 1.06 \mu m wave length was employed, microstructure of welded zone and defect were investigated using optical and scanning electron microscopes. Tensile test and microhardness measurements were carried out to evaluate the weld quality. Welding by this method increased the efficiency tremendously and a depth increase of 85% was achieved.