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Full-Text Articles in Entire DC Network
Angular Momentum Evolution In Close Late-Type Binaries, Carla Maceroni
Angular Momentum Evolution In Close Late-Type Binaries, Carla Maceroni
Turkish Journal of Physics
Accurate monitoring of the orbital period of late-type close binaries can provide important information on their secular evolution and on the structural changes of their components on very short timescales (i.e. decades). The orbital period turns out to be a powerful tool of investigation: it can be measured to great accuracy even with simple equipments and its change produces an easily detectable cumulative effect over time. This paper focuses on two physical mechanisms that cause orbital periods changes in late type binaries with negligible mass loss from the system: the dynamical evolution due to magnetic braking in tidally locked systems, …
Cyclic Nature Of The Orbital Period Variations Of Some Algol-Type Binaries, Seli̇m O. Selam, Osman Demi̇rcan
Cyclic Nature Of The Orbital Period Variations Of Some Algol-Type Binaries, Seli̇m O. Selam, Osman Demi̇rcan
Turkish Journal of Physics
The long-term period variations of the classical algol-type binaries XZ And, U Cep, \beta Per, RT Per, ST Per and TX UMa were studied by using all available observed times of eclipse minima. The (O-C) diagrams formed by the times of eclipse minima were found to be representable by one or more cyclic variations superimposed on a secular parabolic variation. The secular variations in the orbital periods should be caused by the mass transfer between the component stars and the mass loss from the systems. For our sample of Algol systems, none of the cyclic variations were found caused by …
Short-Period Rs Cvn And W Uma Binaries: How Are They Related?, Frans Van't Veer
Short-Period Rs Cvn And W Uma Binaries: How Are They Related?, Frans Van't Veer
Turkish Journal of Physics
Two groups of late-type very close main sequence binaries, the so-called short-period RS Canum Venaticorum (RS CVn) and W Ursae Majoris (W UMa) systems, are important for the understanding of the structure and evolutionary consequencies of angular momentum loss (AML) resulting from magnetic stellar winds of fast rotating solar type stars. The components of RS CVn stars are close to their Roche lobes, but still detached, whereas W UMa binaries are contact systems; both are rotating fast. One of the crucial problems is trying to answer the question if there is a dynamical relation between the two types of binaries …
Photometric Imaging Of Starspots, Techniques And Reliability, Zeki̇ Eker
Photometric Imaging Of Starspots, Techniques And Reliability, Zeki̇ Eker
Turkish Journal of Physics
Historical development of the starspot hypothesis and the unsolved problems associated with it are presented. The "non{uniqueness" attributed to the spot solutions is a major problem which could still discredit current efforts of starspot modeling by photometric or spectroscopic data. The basics of the starspot photometry(direct and inverse photometric problem, and the error analysis of the inverse problem) are presented. Since an analytical formulation exists to compute synthetic light curves from the physical parameters of spots, and recomputing original parameters analytically from the synthetic curves are also possible, the starspot hypothesis is a consistent physical problem. According to the error …
The Light And Colour Variations Of Mm Her, Günay Taş
The Light And Colour Variations Of Mm Her, Günay Taş
Turkish Journal of Physics
RS CVn type eclipsing binary MM Herculis have been observed using B, V, R filters in 1997 and obtained light and colour curves were examined together with the earlier 12 light and colour curves obtained between 1976 and 1997. It was seen that the system is bluer, while it is fainter. Such finding probably reveals the evolutionary effect of the photospheric bright facular structures surrounding starspots.
Magnetic Activity In The Extreme Ultraviolet, Mihalis Mathioudakis
Magnetic Activity In The Extreme Ultraviolet, Mihalis Mathioudakis
Turkish Journal of Physics
The wealth of astronomical observations obtained in the extreme ultraviolet in recent years, have allowed comprehensive studies of the stellar transition regions and coronae to be carried out. For the first time we have been able to resolve individual coronal lines of various elements formed over a large temperature range (10^{5} - 10^{7.2} K). The temperature, densities, abundances and magnetic field strengths of the stellar coronae can now be determined. Here we review some of the observations in the field of cool stars and discuss the implications on atmospheric heating requirements.
Solar Flares, E. Rennan Pekünlü
Solar Flares, E. Rennan Pekünlü
Turkish Journal of Physics
In this paper, the dynamics, the magnetohydrodynamics and the energetics of flaring magnetic loops are reviwed. It is also emphasized that the presented model is in no way a unique one. The most commonly occurring type is labelled as B type flares. This paper reviews the general features of a B type flare.
Dynamical Evolution Of The Rs Cvn-Type Binaries, Osman Demi̇rcan
Dynamical Evolution Of The Rs Cvn-Type Binaries, Osman Demi̇rcan
Turkish Journal of Physics
The orbital angular momentum (orbital AM) of a sample of forty RS CVn-type binaries with the orbital periods P \leq 10 days were estimated and the orbital AM distribution with respect to P was critically interpreted as the orbital AM evolution of these systems caused by the magnetic breaking process with the existence of spin-orbit coupling. The empirical relations (between the orbital AM loss, mass loss and period variation) derived from the diagram of the orbital AM distribution were used in deriving a semi-empirical formula for the dynamical evolution of the RS CVn-type binaries. The magnetic breaking induced dynamical evolution …
Facular Structures On Cool Stars, Serdar Evren
Facular Structures On Cool Stars, Serdar Evren
Turkish Journal of Physics
Activity has many manifestations, from dark spots to bright regions, to the presence of the heated chromosphere, to the superheated corona. Sunspots are extended, strongly magnetic regions on the Sun. Photospheric faculae are generally visible only at the limb. Polar faculae are smaller than the main-zone faculae. The contributions of the active region faculae and the facular network are at least as important as the solar spots in augmenting the solar emission.
On The Coronal Activity Of The Rs Cvn-Type Binaries, Osman Demi̇rcan, Hasan Ak
On The Coronal Activity Of The Rs Cvn-Type Binaries, Osman Demi̇rcan, Hasan Ak
Turkish Journal of Physics
We re-analysed the behaviour of coronal activity of the RS CVn-type binaries as a function of stellar and orbital parameters. Highly significant correlations were found between the x-ray luminosity L_x and the stellar radius R, the Roche lobe filling fraction \Gamma, and the Alfven radius RA. The correlations of L_x with the mass M, the absolute magnitude M_V, the surface gravity g, the Roche lobe filling fraction \Gamma, and the Alfven radius RA are likely to be due to correlations of these quantities with the stellar radius R. Surprisingly, no correlation of L_x on the color (B-V), the rotation velocity …
Co-Ordinated Multi-Wavelength Observations Of The Rs Cvn System Cf Tuc, Edwin Budding, K. L. Jones, O. B. Slee, L. Watson
Co-Ordinated Multi-Wavelength Observations Of The Rs Cvn System Cf Tuc, Edwin Budding, K. L. Jones, O. B. Slee, L. Watson
Turkish Journal of Physics
A `multi-site, multi-wavelength' campaign on the eclipsing RS CVn binary CF Tuc was carried out in 1996 over both optical (photometry and spectroscopy) and radio (microwave) ranges. The microwave data was taken with the Australia Telescope Compact Array (ATCA). It covered slightly more than one complete orbital cycle at 4.8 and 8.64 GHz in one continuous run. There was also coverage of about 25% of the light curve at 1.38 and 2.38 GHz. High dispersion spectroscopy was obtained using the McLellan 1m telescope and échelle spectrograph at Mt John University Observatory (New Zealand). Supporting photometry came from various smaller-scale facilities …
The Experimental Studies On Zr Photoelectron Spectra, I. Buribayev, N. A. Nurmatov, N. Talipov
The Experimental Studies On Zr Photoelectron Spectra, I. Buribayev, N. A. Nurmatov, N. Talipov
Turkish Journal of Physics
Photoelectron spectra (PES) taken from crystalline Zr at 8.4 eV and 10 eV have been studied by a high resolution photoelectron analyzer, with \Delta E = 0.1 eV, and the results were compared to the results calculated for electron density of states in the valence band. Photoelectron work function (WF) measured from the atomically clean Zr surface by Fowler isothermal curves was found to be 3.95 eV \pm 0.02 eV. It was shown that a small dose of residual gas, namely CO, absorbed on the Zr surface, resulted in a decrease of the WF by 0.15-0.25 eV as well as …
The Structure Of Liquid Alkali Metals Calculated By The Thermodynamic Perturbation Theory, H. Bi̇rtan Kavanoz, İdri̇s Gümüş
The Structure Of Liquid Alkali Metals Calculated By The Thermodynamic Perturbation Theory, H. Bi̇rtan Kavanoz, İdri̇s Gümüş
Turkish Journal of Physics
The structure of a hard sphere fluid has been calculated numerically via the Percus-Yevick (PY) and hypernetted-chain (HNC) closure relations and used as a reference system to calculate the structure of liquid alkali metals under the optimized random-phase approximation (ORPA) using the effective ion-ion pair potential formed by the Heine-Abarenkov (HA), and the empty-core (EC) pseudopotentials. The results are compared with experimental results. The calculations made by the reference system under the HNC closure relation are in better agreement with experimental results than those found under the PY closure relation.
The Lattice Dynamics Of \Gamma-Iron, Kemal Çolakoğlu, G. Uğur, M. Çakmak, H. M. Tütüncü
The Lattice Dynamics Of \Gamma-Iron, Kemal Çolakoğlu, G. Uğur, M. Çakmak, H. M. Tütüncü
Turkish Journal of Physics
Lattice dynamical calculations are performed on \gamma-iron using the Clark-Gazis-Wallis (CGW) model to represent the ion-ion interactions, and a modified form of the Sharma-Joshi model to include ion-electron interactions. The theory is used to compute the phonon dispersion curves, frequency spectra and the lattice specific heat of \gamma-iron. The obtained results are in good agreement with the experimental findings, and are better than those calculated using the other theories.
Ionizing Radiations And Annealing Influence On Mosfet Charge States, Zainabidinov Ciragiddin, Atamuratov Atabek, Ysupov Akhmed, Adinaev Kuvondik
Ionizing Radiations And Annealing Influence On Mosfet Charge States, Zainabidinov Ciragiddin, Atamuratov Atabek, Ysupov Akhmed, Adinaev Kuvondik
Turkish Journal of Physics
The threshold voltage shift \Delta V_T and its components due to trapped-oxide charges \Delta V_{Not} and Si-SiO_2 interface traps \Delta V_N in MOSFET exposed to Bremsstrahlung, Co_{60} irradiation and annealing were studied. Several effects caused by differences in the photon energies from two types of sources are discussed as well as a mechanism of changing the trapped-oxide and Si-SiO_2 interface traps by annealing. The mechanism is based on previously available models.
Determination Of Partial Coordinate Number Of Atoms In Amorphous Yb-As-S(Se, Te) Systems, Rasi̇m Ali̇-Zade, Eldar Efendi̇yev, Elman Haji̇yev
Determination Of Partial Coordinate Number Of Atoms In Amorphous Yb-As-S(Se, Te) Systems, Rasi̇m Ali̇-Zade, Eldar Efendi̇yev, Elman Haji̇yev
Turkish Journal of Physics
Partial coordinate number for amorphous compounds, consisting three type of atoms has been determined by way of calculation of the radial distribution curve maximum. The equation solution method has been used as algorithm in programme, which writed in FORTRAN language for working in IBM compatible computers. The programme is compact and integable. The programme has been used for determination partial coordinate number of ytterbium atom in amorphous compounds- YbAs_2S_4, Yb_3As_4S_9, YbAs_4Te_7, Yb_3As_4Se_9 YbAs_4Se_7. Real value of partial coordinate number of ytterbium in this compunds is 2 or 3.
Calibration Of Millimetric Marmara Radio Telescope And Radio Detection Of Ozone Line Over Gebze/Kocaeli In Turkey, Mehmet Emi̇n Özel, I. M. Yusifov, A. O. Allakhverdiev, A. A. Vertiy, G. Bayer, Osman Demi̇rcan, H. Kirbiyik, T. Adigüzel
Calibration Of Millimetric Marmara Radio Telescope And Radio Detection Of Ozone Line Over Gebze/Kocaeli In Turkey, Mehmet Emi̇n Özel, I. M. Yusifov, A. O. Allakhverdiev, A. A. Vertiy, G. Bayer, Osman Demi̇rcan, H. Kirbiyik, T. Adigüzel
Turkish Journal of Physics
A brief description of the calibration procedures for the millimetric Marmara Radio Telescope, MRT-2 is presented. Observations carried out during the spectroscopic calibration work is indicative of daily variations of Ozone line of sight density over the telescope location. This being also the first radio observations carried out in Turkey, a short account of observations and results are given.
Magnetodielectrical Polymer Compositional Materials, Sh. V. Mamedov, Y. Lenger, Sevi̇l Bolcal, Vilayet A. Alekperov, M. A. Ramazanov, R. Z. Sadikhov
Magnetodielectrical Polymer Compositional Materials, Sh. V. Mamedov, Y. Lenger, Sevi̇l Bolcal, Vilayet A. Alekperov, M. A. Ramazanov, R. Z. Sadikhov
Turkish Journal of Physics
Magnetodielectrical polymer compositional materials containing carbonyl iron (CI) were obtained. The changes of permittivity and permeability, loss angle tangent, resistivity, mechanical and electrical properties, depending on the content of carbonyl iron have been investigated. It is shown that the magnetodielectrical materials with 20-40% mass content of carbonyl iron have possible practical use.
Energetics Of Spherical Clusters, Hati̇ce Kökten, Şaki̇r Erkoç
Energetics Of Spherical Clusters, Hati̇ce Kökten, Şaki̇r Erkoç
Turkish Journal of Physics
The energetics of spherical clusters of elements Fe in bcc, Ca and Pb in fcc, and C in diamond structure have been investigated by using emprical many-body potential energy function which contains two- and three-body inteactions. In the variation of average interaction energy per atom (E_b) versus cluster size (N_{sh}; number of shells) only carbon clusters have magic numbers at 5, 8, 11 and 14 shells. E_b versus N_{sh} becomes smooth after 15 shells for carbon, however this variation becomes smooth for the other elements after 10 shells. The variation of two-body to three-body interaction energy versus cluster size becomes …
Fundamental Research And Device Technology, B. K. Ridley
Fundamental Research And Device Technology, B. K. Ridley
Turkish Journal of Physics
Highlights of the interaction between fundamental research and semiconductor device technology are summarized.
Electrons And Phonons In Gan Semiconductor Quantum Well Devices, M. Babiker, N. A. Zakhleniuk, C. R. Bennett, V. N. Stavrou, B. K. Ridley
Electrons And Phonons In Gan Semiconductor Quantum Well Devices, M. Babiker, N. A. Zakhleniuk, C. R. Bennett, V. N. Stavrou, B. K. Ridley
Turkish Journal of Physics
Electrons and polar optical phonons and their interactions are considered in the context of semiconductor quantum well devices, with particular reference to real quantum well laser structures. Distinction is made between wide-barrier and narrow-barrier structures and we explore the implications of these regimes for the description of the electron capture process. Special emphasis is made on the significant effects arising from the large effective mass ratio in AlN/GaN structures.
Electron Transport In Gaas Quantum Wells: Effect Of Interface Roughness Scatterin, Rita Gupta
Electron Transport In Gaas Quantum Wells: Effect Of Interface Roughness Scatterin, Rita Gupta
Turkish Journal of Physics
The importance of interface roughness (IFR) scattering of electrons and LO-phonons for electron transport in semiconductor quantum wells is discussed. Modulation doping of quantum wells minimizes the effect of impurity scattering on the low-field electron mobility so that IFR scattering of electrons in the well becomes the major limiting factor. A model calculation of IFR scattering of electrons in quantum wells is presented and it is shown that (both)\Lambda and \Delta, the parameters defining IFR, can be estimated by comparing the theoretical and experimental electron mobilities. The application of high electric field leads to a distribution of hot electrons which …
Exchange-Correlation Effects In The Impurity-Limited Mobility Of Gaas Quantum Wires, B. Tanatar
Exchange-Correlation Effects In The Impurity-Limited Mobility Of Gaas Quantum Wires, B. Tanatar
Turkish Journal of Physics
We study the many-body effects described by the local-field corrections on the mobility of quasi-one dimensional electron systems. The low temperature mobility due to remote-impurity doping and interface-roughness scattering is calculated within the relaxation time approximation. We find that correlation effects significantly reduce the mobility at low density.
Well-Width Dependence Of Warm Electron Relaxation And Interface Roughness Scattering In Gaas/Ga_{1-X}Al_Xas Multiple Quantum Wells, M. Cankurtaran, H. Çeli̇k, E. Tiraş, A. Bayrakli, N. Balkan
Well-Width Dependence Of Warm Electron Relaxation And Interface Roughness Scattering In Gaas/Ga_{1-X}Al_Xas Multiple Quantum Wells, M. Cankurtaran, H. Çeli̇k, E. Tiraş, A. Bayrakli, N. Balkan
Turkish Journal of Physics
We review our recent results concerning the well-width dependence of the acoustic-phonon-assisted energy relaxation of two-dimensional (2D) warm electrons in modulation-doped GaAs/Ga_{1-x}Al_xAs multiple quantum wells. Electron energy-loss rates via the emission of acoustic phonons are determined from the amplitude of Shubnikov-de Haas (SdH) oscillations, measured as a function of lattice temperature and applied electric field. Experimental results are compared with the existing theoretical models that involve deformation-potential and screened and unscreened piezoelectric scattering. Well-width dependence of the quantum and transport mobilities of 2D electrons in the same samples have also been determined by measuring the quantum oscillations in both the …
Large-Bandgap Semiconductors, B. K. Ridley
Large-Bandgap Semiconductors, B. K. Ridley
Turkish Journal of Physics
The general features of large-bandgap semiconductors that make them interesting for electronic and optoelectronic applications are briefly reviewed. The nitrides AIN, GaN and InN are singled out for a more focused treatment.
Angular Dependence And Mode Distribution Of Acoustic Phonon Emission By Hot 2d Electrons In Gaas/Algaas Heterojunctions And Quantum Wells, Dietmar Lehmann, Czeslaw Jasiukiewicz
Angular Dependence And Mode Distribution Of Acoustic Phonon Emission By Hot 2d Electrons In Gaas/Algaas Heterojunctions And Quantum Wells, Dietmar Lehmann, Czeslaw Jasiukiewicz
Turkish Journal of Physics
We report a detailed theoretical study of the angular dependence and mode distribution of the acoustic phonon emission by hot two-dimensional electron gases in GaAs/AlGaAs heterojunctions and quantum wells and compare the results with some recent heat pulse measurements for carrier temperatures below 50 K. Common to all the experimental results was the strong dependence of the ratio of emitted longitudinal acoustic (LA) phonons to transverse acoustic (TA) phonons from the width of the quantum well and the absence of LA phonons propagating in a direction close to the 2DEG normal for GaAs/AlGaAs heterojunctions. To explain these phenomena and to …
Electrons In Large-Bandgap Bulk Semiconductors And Quantum Wells, N. A. Zakhleniuk, M. Babiker, C. R. Bennett, B. K. Ridley
Electrons In Large-Bandgap Bulk Semiconductors And Quantum Wells, N. A. Zakhleniuk, M. Babiker, C. R. Bennett, B. K. Ridley
Turkish Journal of Physics
The analytical theory of hot electrons interacting with lattice vibrations, impurities, and interface roughness in quantum wells is developed. We have obtained new distribution functions which describe all the kinetic properties of the non-equilibrium electron gas. As a specific example we present the electric field dependence of the electron mobility in GaN-based quantum wells and in bulk GaN. The relative importance of the different scattering mechanisms is analysed in detail.
Coherent Control Experiments As A Probe Of The Carrier Scattering Processes, P. Le Jeune, X. Marie, T. Amand, M. Paillard, J. Barrau
Coherent Control Experiments As A Probe Of The Carrier Scattering Processes, P. Le Jeune, X. Marie, T. Amand, M. Paillard, J. Barrau
Turkish Journal of Physics
We report on coherent control experiments of excitons in GaAs/AlGaAs Quantum wells.This technique, which relies on the linear response of the crystal,is used to investigate the spin-dependent exciton-exciton scattering.
Energy Relaxation Rate Of Hot Electrons In N-Type Gan Epilayers Using Heat Pulse Techniques, P. Hawker, A. J. Kent, T. S. Cheng, C. T. Foxon
Energy Relaxation Rate Of Hot Electrons In N-Type Gan Epilayers Using Heat Pulse Techniques, P. Hawker, A. J. Kent, T. S. Cheng, C. T. Foxon
Turkish Journal of Physics
We have measured the energy relaxation rate of hot electrons in MBE grown bulk GaN epilayers on GaAs and sapphire substrates over the electron temperature range 1 - 130 K. The measurements were made using heat pulse techniques. For layers grown on GaAs substrates the results show that the carriers reside in the substrate, probably as in a GaAs/AlGaAs heterojunction. For layers grown on sapphire substrates we obtain a P \propto T^4_e dependence for the relaxation rate in the low temperature limit, consistent with piezoelectric coupling in the so-called `dirty' regime, changing to a linear dependence in the high temperature, …
Feasibility Of The Gainp/Ingaas/Gaas System For Modulation Doped Field-Effect Transistors, C. Besi̇kci̇, Y. Ci̇van
Feasibility Of The Gainp/Ingaas/Gaas System For Modulation Doped Field-Effect Transistors, C. Besi̇kci̇, Y. Ci̇van
Turkish Journal of Physics
Si-doped single Ga_{0.51}In_{0.49}P layers and GaInP/InGaAs/GaAs modulation doped field-effect transistor structures grown by gas source molecular beam epitaxy were characterized in detail through Hall-Effect and Deep Level Transient Spectroscopy techniques. Electrical characterization of the undoped and moderately Si-doped (N_D = 3 x 10^{17} cm^{-3}) GaInP layers yielded an electron trap with an activation energy of 0.75 eV and a temperature dependent capture cross section with a capture barrier of 0.593 eV showing DX center properties. The trap was not detected in highly Si doped (N_D = 4 x 10^{18} cm^{-3}) as grown layers suggesting that it is a defect complex …