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Full-Text Articles in Physical Sciences and Mathematics
Temperature-Dependent Photoluminescence Of Ge/Si And Ge 1-Ysn Y/Si, Indicating Possible Indirect-To-Direct Bandgap Transition At Lower Sn Content, Mee-Yi Ryu, Thomas R. Harris, Yung Kee Yeo, Richard T. Beeler, John Kouvetakis
Temperature-Dependent Photoluminescence Of Ge/Si And Ge 1-Ysn Y/Si, Indicating Possible Indirect-To-Direct Bandgap Transition At Lower Sn Content, Mee-Yi Ryu, Thomas R. Harris, Yung Kee Yeo, Richard T. Beeler, John Kouvetakis
Faculty Publications
Temperature (T)-dependent photoluminescence (PL) has been investigated for both p-Ge and n-Ge1-ySny films grown on Si substrates. For the p-Ge, strong direct bandgap (ED) along with weak indirect bandgap related (EID) PL at low temperatures (LTs) and strong ED PL at room temperature (RT) were observed. In contrast, for the n-Ge1-ySny, very strong dominant EID PL at LT and strong ED PL were observed at RT. This T-dependent PL study indicates that the indirect-to-direct bandgap transitions of Ge1-ySn …