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Articles 1 - 6 of 6
Full-Text Articles in Physical Sciences and Mathematics
Computing The M = 1 Diocotron Frequency Via An Equilibrium Calculation In Non-Neutral Plasmas, Ross L. Spencer
Computing The M = 1 Diocotron Frequency Via An Equilibrium Calculation In Non-Neutral Plasmas, Ross L. Spencer
Faculty Publications
The m = 1 diocotron mode in non-neutral plasmas has long been thought of as a shifted equilibrium, and its frequency has been approximately calculated in this way by Fine and Driscoll [Phys. Plasmas 5, 601 (1998)]. This article shows that this idea can be coupled with a standard axisymmetric equilibrium calculation on a grid to calculate the frequency of this mode to very high precision including both finite-length and thermal effects, provided that the Debye length is small enough. As the Debye length begins to approach the plasma size not only does the shifted equilibrium calculation fail to predict …
Optical Properties And Application Of Uranium-Based Thin Films For The Extreme Ultraviolet And Soft X-Ray Region, Richard L. Sandberg, David D. Allred, Shannon Lunt, Marie K. Urry, R. Steven Turley
Optical Properties And Application Of Uranium-Based Thin Films For The Extreme Ultraviolet And Soft X-Ray Region, Richard L. Sandberg, David D. Allred, Shannon Lunt, Marie K. Urry, R. Steven Turley
Faculty Publications
Uranium oxide and uranium nitride thin films reflect significantly more than all previously known/standard reflectors (e.g., nickel, gold, and iridium) for most of the 4-10 nm range at low angles of incidence. This work includes measurements of the EUV/soft x-ray (2-20 nm) reflectance of uranium-based thin films (~20 nm thick) and extraction of their optical constants (d and ?). We report the reflectances at 5, 10, and 15 degrees grazing incidence of air-oxidized sputtered uranium, reactively sputtered (O2) uranium oxide, and reactively sputtered (N2) uranium nitride thin films measured at Beamline 6.3.2 at the Advanced Light Source (ALS) at Lawrence …
Removing Surface Contaminants From Silicon Wafers To Facilitate Euv Optical Characterization, Richard L. Sandberg, David D. Allred, A. L. Jackson, J. E. Johnson, W. Evans, T. Doughty, A. E. Baker, K. Adamson, A. Jacquier, R. E. Robinson
Removing Surface Contaminants From Silicon Wafers To Facilitate Euv Optical Characterization, Richard L. Sandberg, David D. Allred, A. L. Jackson, J. E. Johnson, W. Evans, T. Doughty, A. E. Baker, K. Adamson, A. Jacquier, R. E. Robinson
Faculty Publications
The extreme ultraviolet (EUV) is becoming increasingly important. Principal applications include orbital space-based astronomy and lithography for integrated circuit computer chips. A main impediment to further development of efficient mirrors is the lack of reliable optical constants for various materials in this region of the electromagnetic spectrum. One reason for the unreliability of the optical constants is that the sample surfaces are often contaminated with foreign material, especially organic compounds, when exposed to laboratory air. Several cleaning techniques were evaluated, namely: 1) strippable solid optical cleaner (Opticlean®); 2) oxygen plasma etch; 3) high energy UV light/ozone; 4) strippable coating followed …
Microsecond Spin-Flip Times In N-Gaas Measured By Time-Resolved Polarization Of Photoluminescence, John S. Colton, T. A. Kennedy, A. S. Bracker, D. Gammon
Microsecond Spin-Flip Times In N-Gaas Measured By Time-Resolved Polarization Of Photoluminescence, John S. Colton, T. A. Kennedy, A. S. Bracker, D. Gammon
Faculty Publications
We have observed microsecond spin-flip times in lightly doped n-GaAs, by measuring the photoluminescence polarization in the time domain with pump and probe pulses. Times up to 1.4 μs have been measured. Our results as a function of magnetic field indicated three regions governing the spin relaxation: a low field region, where spin-flip times increase due to suppression of the nuclear hyperfine interaction for localized electrons, a medium field region where spin-flip times increase due to narrowing of the hyperfine relaxation for interacting electrons, and a high field region where spin-flip times begin to level off due to the increasing …
Boron Alloying In Gan, Gus L. W. Hart, Laurian Escalanti
Boron Alloying In Gan, Gus L. W. Hart, Laurian Escalanti
Faculty Publications
Using first-principles calculations in the local density approximation, we studied effects of adding up to 6% boron to zinc-blende GaN. We found that the band gap increases monotonically with boron incorporation, in agreement with experiment. A composition-independent band-gap bowing parameter of 4.30 eV was determined, and proved to be large compared to bowing for other mixed cation systems. The formation enthalpy of mixing, ΔH, was determined for BxGa1-xN, BxGa1-xAs, and GaAs1-xNx. A comparison of enthalpies indicates that the production of BxGa1-xN films with boron concentrations of at least 5% may be possible.
Uranium Oxide As A Highly Reflective Coating From 100-400 Ev, Richard L. Sandberg, David D. Allred, Luke J. Bissell, Jed E. Johnson, R. Steven Turley
Uranium Oxide As A Highly Reflective Coating From 100-400 Ev, Richard L. Sandberg, David D. Allred, Luke J. Bissell, Jed E. Johnson, R. Steven Turley
Faculty Publications
We present the measured reflectances (Beamline 6.3.2, ALS and LBNL) of naturally oxidized uranium and naturally oxidized nickel thin films from 100-460 eV (2.7 to 11.6 nm) at 5 and 15 degrees grazing incidence. These show that uranium as UO2, can fulfill its promise as the highest known single surface reflector for this portion of the soft x-ray region, being nearly twice as reflective as nickel in the 124-250 eV (5-10 nm) region. This is due to its large index of refraction coupled with low absorption. Nickel is commonly used in soft x-ray applications in astronomy and synchrotrons. (Its reflectance …