Physical Sciences and Mathematics Commons^™

Defect Assisted Growth Of Copper-Silicide Nanostructures On Si(100) And Si(111), Endu Sekhar Srinadhu

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As the dimensions of the smallest feature on the integrated circuit has minia-turized into the range of tens of nanometers, patterning of highly ordered nanos-tructures with tunable size and shape in large scale on the surface of substrate is highly demanding and increasingly challenges the limits of nanolithography. To over-come the conventional lithographic limitations, self assembled methods have been explored. While strain driven self assembly is widely viewed as a promising technique for patterning at the nanoscale, to follow this approach and create structures in a desired manner, a reliable means to engineer and characterize the shape and sizes of …