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Full-Text Articles in Physical Sciences and Mathematics
Structural Investigations And Magnetic Properties Of Sol-Gel Ni0.5zn0.5fe2o4 Thin Films For Microwave Heating, Pengzhao Z. Gao, Evgeny V. Rebrov, Tiny M. W. G. M. Verhoeven, Jaap C. Schouten, Richard Kleismit, Gregory Kozlowski, John S. Cetnar, Zafer Turgut, Guru Subramanyam
Structural Investigations And Magnetic Properties Of Sol-Gel Ni0.5zn0.5fe2o4 Thin Films For Microwave Heating, Pengzhao Z. Gao, Evgeny V. Rebrov, Tiny M. W. G. M. Verhoeven, Jaap C. Schouten, Richard Kleismit, Gregory Kozlowski, John S. Cetnar, Zafer Turgut, Guru Subramanyam
Physics Faculty Publications
Nanocrystalline Ni0.5Zn0.5Fe2O4 thin films have been synthesized with various grain sizes by a sol-gel method on polycrystalline silicon substrates. The morphology, magnetic, and microwave absorption properties of the films calcined in the 673–1073 K range were studied with x-ray diffraction, scanning electron microscopy, x-ray photoelectron spectroscopy, atomic force microscopy, vibrating sample magnetometry, and evanescent microwave microscopy. All films were uniform without microcracks. Increasing the calcination temperature from 873 to 1073 K and time from 1 to 3 h resulted in an increase of the grain size from 12 to 27 nm. The saturation …
Excitation-Induced Germanium Quantum Dot Formation On Si (100)-(2×1), Ali Oguz Er, Hani E. Elsayed-Ali
Excitation-Induced Germanium Quantum Dot Formation On Si (100)-(2×1), Ali Oguz Er, Hani E. Elsayed-Ali
Physics Faculty Publications
The effect of nanosecond pulsed laser excitation on the self-assembly of Ge quantum dots grown by pulsed laser deposition on Si (100)-(2×1) was studied. In situ reflection high-energy electron diffraction and ex situ atomic force microscopy were used to probe the quantum dot structure and morphology. At room temperature, applying the excitation laser decreased the surface roughness of the grown Ge film. With surface electronic excitation, crystalline Ge quantum dots were formed at 250 °C, a temperature too low for their formation without excitation. At a substrate temperature of 390 °C, electronic excitation during growth was found to improve the …