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Articles 1 - 10 of 10

Full-Text Articles in Physical Sciences and Mathematics

Field Radiation Of Spin I Massless Particle, Ralph Alvin Mudgett Dec 1973

Field Radiation Of Spin I Massless Particle, Ralph Alvin Mudgett

Masters Theses

No abstract provided.


Spectroscopic Determinations Using Resonance Spin-Flip In 12C (P,P1) 12C And 50Ti (P,P1) 50Ti, Lee Robert Baumann Dec 1973

Spectroscopic Determinations Using Resonance Spin-Flip In 12C (P,P1) 12C And 50Ti (P,P1) 50Ti, Lee Robert Baumann

Masters Theses

No abstract provided.


A Direct Measurement Of The Ratio Of The Reaction Cross Sections For Two-Photon And Three-Photon Positron Annihilation In Aluminum And Silver, Robert Maurice Heavenrich Dec 1973

A Direct Measurement Of The Ratio Of The Reaction Cross Sections For Two-Photon And Three-Photon Positron Annihilation In Aluminum And Silver, Robert Maurice Heavenrich

Masters Theses

The probability of annihilation of a positron with its antiparticle, an electron, is spin dependent. Since both particles have spin component one -half, there are two possible relative orientations of their spins they can either be aligned (parallel) in the 3S, triplet, state with total spin component │Sz│= ½ n - ½ n = 1 n or they can be opposite (antiparallel) in the 1S; singlet, state with│Sz│= ½ n - ½ n = 0. To conserve energy and angular momentum, annihilation from the triplet state must result in the creation of an odd …


Angular Distributions Of Protons From The 28Si(∝,P)31P Reaction, Susan Mary Allen Aug 1973

Angular Distributions Of Protons From The 28Si(∝,P)31P Reaction, Susan Mary Allen

Masters Theses

No abstract provided.


Properties Of 1‾ Excited States Of Complex Nuclei, Carlos Ignacio Calle Aug 1973

Properties Of 1‾ Excited States Of Complex Nuclei, Carlos Ignacio Calle

Masters Theses

No abstract provided.


Effects Of Nuclear Deformation On Neutron Total Cross Sections, Dennis Gilbert Blondin Apr 1973

Effects Of Nuclear Deformation On Neutron Total Cross Sections, Dennis Gilbert Blondin

Masters Theses

No abstract provided.


Model Correction For The Formation Of Amorphous Silicon By Ion Implantation, John Robert Dennis Jan 1973

Model Correction For The Formation Of Amorphous Silicon By Ion Implantation, John Robert Dennis

Masters Theses

"ESR has been used to study the formation of an amorphous layer in silicon by ion implantation. The room temperature implants were done at 20 keV with low dose rates. The critical dose was determined as a function of ion mass for six different ion species. Our experimental heavy ion results agree with those found by other ESR investigators at higher energy, but are not the same for light ions. However, our light and heavy ion results agree with electron microscope measurements for low energy implants. An energy-independent model for the formation of amorphous silicon by ion implantation has …


The Design And Calibration Of A Vibrating Sample Magnetometer, Donald Dwight Hoffman Jan 1973

The Design And Calibration Of A Vibrating Sample Magnetometer, Donald Dwight Hoffman

Masters Theses

"The design and calibration of a vibrating sample magnetometer is described. The sample motion was in the direction of the external magnetic field which was produced by a superconducting solenoid. The maximum external magnetic field was 70 kilogauss. Sample temperature could be varied from 77°K to 1000°K with a vacuum jacketed furnace. The maximum temperature was obtained with approximately 27 watts. The instrument was calibrated to 1% with a spherical nickel sample"--Abstract, page ii.


Temperature Dependence Of The Formation Of An Amorphous Layer In Ion-Implanted Silicon, Gary Keith Woodward Jan 1973

Temperature Dependence Of The Formation Of An Amorphous Layer In Ion-Implanted Silicon, Gary Keith Woodward

Masters Theses

"Electron spin resonance (ESR) has been used to study the temperature dependence of the formation of an amorphous damaged layer produced by ion implantation in silicon.

Undoped silicon wafers were implanted with N+, Ar+, and Kr+ ions at 20 keV and dose rates less than .36 µa/cm2. Implant temperatures ranged from room temperature to 250°C. ESR measurements were made at room temperature on these wafers. The only ESR signal found was that associated with amorphous silicon. The ESR signal amplitude for a given ion and temperature increased approximately linearly with dose up to …


The Contribution Of Phonon-Induced Tunneling To Donor Esr Spectral Narrowing In Semiconductors, David Lawrence Meier Jan 1973

The Contribution Of Phonon-Induced Tunneling To Donor Esr Spectral Narrowing In Semiconductors, David Lawrence Meier

Masters Theses

"The narrowing of donor electron spin resonance spectra with increasing donor concentration ND and increasing temperature T has been observed in semiconductors in the past. One proposed explanation for this phenomenon has been narrowing due to electron motion caused by phonon-induced tunneling (hopping) between donor sites. According to the Anderson narrowing theory, the line width of the narrowed line can be expressed in terms of the average square spread of the non-narrowed spectrum, < H²>ave, and the average frequency of electron motion, ωn. Previous work has been done on narrowing by hopping, but rigorous expressions for ω …