Physical Sciences and Mathematics Commons^™

Property Morphology Correlations Of Organic Semiconductor Nanowires, Frederick Marshall Mcfarland

Dissertations

Chemically doped and non-doped P3HT nanoaggregates are studied to establish a comprehensive understanding of the interplay between their morphology and various optoelectronic properties. One-dimensional nanoaggregates of P3HT are chosen as the model systems here due to their high surface/volume ratio and suitability for microscopic investigations.

Atomic force microscopy (AFM) and kelvin probe force microscopy (KPFM) are used to correlate property/morphology characteristics of non-doped P3HT nanowhiskers. Topographical measurements indicate that individually folded P3HT motifs stack via interfacial interactions to form nanowhiskers in solution. Further aging leads to multi-layered nanowhiskers with greater stability and less instances of π-π sliding of interfacial edge-on …

Mechanical, Electronic And Optical Properties Of Multi-Ternary Semiconductor Alloys, Dongguo Chen

Dissertations

The ability to obtain tunable properties with composition makes multi-ternary alloys extremely useful for a variety of applications in semiconductor devices and is of significant interest in experimental and theoretical research. This dissertation investigates the mechanical, electronic and optical properties of multi-ternary, i.e., binary, ternary and quaternary, semiconductor alloys using analytical methods and first-principles calculations.

For the calculations of mechanical properties, existing models on the average shear modulus of III-V & II-VI binary semiconductors are revised. New expressions are developed for the average Young’s modulus as well as the shear modulus and Young’s modulus on (111) plane for these compounds. …

Emissivity Measurements And Modeling Of Silicon Related Materials And Structures, Sufian Abedrabbo

Dissertations

The objective of this dissertation is to investigate the major issues concerning applications of pyrometry for applications in rapid thermal processing (RTP) of silicon related materials. The research highlights of this work are:

Establishment of spectral ernissometry as a novel, reliable and reproducible technique for:

Determination of wavelength and temperature dependent reflectivity, transmissivity, emissivity and temperature, simultaneously, of silicon related materials and structures. The emissometer operates in the wavelength range of 1-20mm and temperature range of 300-1200K. The analysis of the influence of morphological effects on the radiative properties by measurement of (a) front-smooth incidence versus backside-rough incidence of singleside …