Open Access. Powered by Scholars. Published by Universities.®
Physical Sciences and Mathematics Commons™
Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 2 of 2
Full-Text Articles in Physical Sciences and Mathematics
Bi-Relaxation Behaviors In Epitaxial Multiferroic Double-Perovskite Bife0.5mn0.5o3/Caruo3 Heterostructures, Chew Khian Hooi, Zhan Q., Jiang Y., Miao J., Zhang X.
Bi-Relaxation Behaviors In Epitaxial Multiferroic Double-Perovskite Bife0.5mn0.5o3/Caruo3 Heterostructures, Chew Khian Hooi, Zhan Q., Jiang Y., Miao J., Zhang X.
Chew Khian Hooi
Multiferroic double-perovskite BiFe0.5Mn0.5O3 thin film heterostructures were epitaxially grown on CaRuO3-buffered (001) SrTiO3 by pulse laser deposition. Typical Vogel-Fulcher relaxorlike dielectric and magnetic susceptibilities were observed, implying the film exhibits the properties of an electric relaxor and a magnetic relaxor. Polarization and size of polar nanoregions (PNRs) were determined by fitting the dielectric constant to a multi-polarization mechanism model. It was found that PNRs of 7-11 nm decrease from 0.67 mu C/cm(2) to 0.11 mu C/cm(2), as the temperature increases from 380 K to 460 K. A weak ferromagnetism was observed via magnetic hysteresis loops up to 300 K. (C) …
Defects Control For Improved Electrical Properties In (Ba0.8sr0.2)(Zr0.2ti0.8)O-3 Films By Co Acceptor Doping, Chew Khian Hooi, Jiang Y., Miao J.
Defects Control For Improved Electrical Properties In (Ba0.8sr0.2)(Zr0.2ti0.8)O-3 Films By Co Acceptor Doping, Chew Khian Hooi, Jiang Y., Miao J.
Chew Khian Hooi
(Ba0.8Sr0.2)(Zr0.2Ti0.8)O-3 (BSZT) films were grown on La0.5Sr0.5CoO3 buffered (001) SrTiO3 substrates by pulsed laser deposition. Effects of Co doping on electrical properties of the films were investigated to establish material design through defects control. The doping led to a significant improvement in the electrical properties with reduction in leakage current and dielectric loss. In addition, the dielectric tunability and figure of merit were enhanced, implying that Co-doped BSZT films are promising materials for tunable microware applications. Our detail studies suggest that the improved electrical properties of Co-doped BSZT films are closely related to defect concentrations in the films. (C) 2011 …