Physical Sciences and Mathematics Commons^™

Diode Properties Of Nanotube Networks, David D. Allred, Bryan Hicks, Stephanie Getty

Faculty Publications

Single-walled carbon nanotubes (SWCNT) were prepared using iron catalysts deposited by indirect evaporation on silicon substrate covered with 500 nm-thick thermal oxide. Diode SWCNT devices have been fabricated using Au and Al, as the asymmetric metal contacts, and a random network of metallic and semiconducting nanotubes as the device channel. No effort was made to align the SWCNTs or to eliminate metallic nanotubes in our devices. Asymmetric voltage-current behavior was seen. Current rectification was observed in the source-drain bias range of -3 V to +3 V. Rectification was somewhat surprising since, although metallic tubes are in the minority (~ 1/3), …