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Full-Text Articles in Physical Sciences and Mathematics
Quantum Dot Band Gap Measurements, John Ryan Peterson
Quantum Dot Band Gap Measurements, John Ryan Peterson
Student Works
This presentation was given during the summer of 2016 as part of the BYU REU program funded by the NSF. Here I give a brief explanation of our quantum dot synthesis as well as explain the use of absorption spectroscopy to measure indirect band gap energies of semiconductors. Our experimental setup is shown and recent improvements are explained. We report indirect band gaps of quantum dots containing varying amounts of cobalt oxide and manganese oxide and synthesized in the protein ferritin. The data show that the band gap can be tuned arbitrarily in a certain range by varying the concentrations …
Direct Band Gap Measurements, John Ryan Peterson
Direct Band Gap Measurements, John Ryan Peterson
Student Works
This presentation was given during the summer of 2016 as part of the BYU REU program funded by the NSF. Here I give a brief explanation of our quantum dot synthesis and then explain the mechanism of photoluminsecence used to measure indirect band gap energies of semiconductors. Our experimental setup is shown. Direct band gaps of lead sulfide quantum dots synthesized in ferritin are reported. The data show that the band gap can be tuned arbitrarily in a certain range by varying the concentrations of the reactants. We compare stability of quantum dots in ferritin to quantum dots synthesized without …
Understanding Dc-Bias Sputtered Thorium Oxide Thin Films Useful In Euv Optics, William R. Evans, Sarah C. Barton, Michael Clemens, David D. Allred
Understanding Dc-Bias Sputtered Thorium Oxide Thin Films Useful In Euv Optics, William R. Evans, Sarah C. Barton, Michael Clemens, David D. Allred
Faculty Publications
We use spectroscopic ellipsometry to determine the optical constants of seven thin-film ThO2 samples deposited by radio-frequency sputtering, thickness ranging between 24 and 578 nm, for the spectral range of 1.2 to 6.5. We used a hollow-cathode light source and vacuum monochromator to measure constants at 10.2 eV. None of the deposition parameters studied including DC-bias voltages successfully increased the n of (that is, densify) thoria films. The value of n at 3.0 eV is 1.86 ± 0.04. We find compelling evidence to conclude that the direct bad gap is at ~5.9 eV, clarifying the results of others, some of …
Negative Band Gap Bowing In Epitaxial Inas/Gaas Alloys And Predicted Band Offsets Of The Strained Binaries And Alloys On Various Substrates, Gus L. W. Hart, Kwiseon Kim, Alex Zunger
Negative Band Gap Bowing In Epitaxial Inas/Gaas Alloys And Predicted Band Offsets Of The Strained Binaries And Alloys On Various Substrates, Gus L. W. Hart, Kwiseon Kim, Alex Zunger
Faculty Publications
We use pseudopotential theory to provide (1) the band offsets of strained GaAs and InAs on various substrates and (2) the energies Ev(x) of the valence and conduction bands of InxGa1-xAs alloy, as a function of composition. Results are presented for both the bulk alloy and for the alloy strained on InP or GaAs. We predict that while Ex(x) bows downward for relaxed bulk alloys, it bows upward for strained epitaxial alloys. The calculated alloy offsets are used to discuss electron and hole localization in this system.
Electronic Structure Of Bas And Boride Iii-V Alloys, Gus L. W. Hart, Alex Zunger
Electronic Structure Of Bas And Boride Iii-V Alloys, Gus L. W. Hart, Alex Zunger
Faculty Publications
Boron arsenide, the typically ignored member of the Group-III–V arsenide series BAs-AlAs-GaAs-InAs is found to resemble silicon electronically: its Γ conduction-band minimum is p-like (Γ15), not s-like (Γ1c), it has an X1c-like indirect band gap, and its bond charge is distributed almost equally on the two atoms in the unit cell, exhibiting nearly perfect covalency. The reasons for these are tracked down to the anomalously low atomic p orbital energy in the boron and to the unusually strong s–s repulsion in BAs relative to most other Group-III–V compounds. We find unexpected valence-band offsets of BAs with respect to GaAs and …