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Full-Text Articles in Physical Sciences and Mathematics
Raman Spectroscopic Study Of The Formation Of T-Mosi2 From Mo/Si Multilayers, Ming Cai, David D. Allred, A. Reyes-Mena
Raman Spectroscopic Study Of The Formation Of T-Mosi2 From Mo/Si Multilayers, Ming Cai, David D. Allred, A. Reyes-Mena
Faculty Publications
We have used Raman spectroscopy, large- and small-angle x-ray diffraction spectroscopy of sputter-deposited, vacuum-annealed, soft x-ray Mo/Si thin-film multilayers to study the physics of silicide formation. Two sets of multilayer samples with d-spacing 8.4 and 2.0 nm have been studied. Annealing at temperatures above 800 °C causes a gradual formation of amorphous MoSi2 interfaces between the Si and Mo layers. The transition from amorphous to crystalline MoSi2 is abrupt. The experimental results indicate that nucleation is the dominant process for the early stage and crystallization is the dominant process after nucleation is well advanced. In the thicker multilayer, a portion …
Emitted Current Instability From Silicon Field Emission Emitters Due To Sputtering By Residual Gas Ions, W.I. Karain, Larry V. Knight, David D. Allred, A. Reyes-Mena
Emitted Current Instability From Silicon Field Emission Emitters Due To Sputtering By Residual Gas Ions, W.I. Karain, Larry V. Knight, David D. Allred, A. Reyes-Mena
Faculty Publications
We have fabricated arrays of silicon field emitters using semiconductor lithography techniques. The density of the tips was 10^5/cm^2. The maximum current that can be extracted from each emitter is limited by resistive heating. We have investigated how the electron current emitted changes under constant applied voltage. We found that the current is very sensitive to the vacuum conditions. We attribute this to sputtering of the emitters due to ionized residual gas molecules. The poorer the vacuum, the higher the instability in the current. We studied this phenomenon at 10^6 and 10-x Torr. The model of two concentric spherical shells …
Mesostructure Of Photoluminescent Porous Silicon, David D. Allred, F. Ruiz, C. Vázquez-López, Jesus González-Hernández, G. Romero-Paredes, R. Peña-Sierra, G. Torres-Delgado
Mesostructure Of Photoluminescent Porous Silicon, David D. Allred, F. Ruiz, C. Vázquez-López, Jesus González-Hernández, G. Romero-Paredes, R. Peña-Sierra, G. Torres-Delgado
Faculty Publications
Scanning electron microscopy, atomic force microscopy, and Raman spectroscopy were used to characterize the microstructure of photoluminescent porous silicon (PS) layers formed by the anodic etching (HF:H2O:ethanol), at various current densities, of p-type (100) silicon wafers possessing resitivity in the range 1-2 Ω cm. Existing models for the origin of luminescence in PS are not supported by our observations. Cross-sectional as well as surface atomic force micrographs show the material to be clumpy rather than columnar; rodlike structures are not observed down to a scale of 40 nm. A three-dimensional model of the mesostructure of porous silicon is discussed. Room-temperature …
Oscillator Strengths For Fe Ii Transitions At 224.918 And 226.008 Nanometers, Scott D. Bergeson, K. L. Mullman, J. E. Lawler
Oscillator Strengths For Fe Ii Transitions At 224.918 And 226.008 Nanometers, Scott D. Bergeson, K. L. Mullman, J. E. Lawler
Faculty Publications
We report accurate experimental absorption oscillator strengths (f-values) for transitions out of the ground level of Fe II to the z4Do7/2 and z4Do9/2 levels at 224.918 and 226.008 nm (air wavelengths) to be 0.00182(14) and 0.00244(19), respectively. The number in parenthesis is the uncertainty in the last digits. These two lines are important for studying Fe abundances and grain depletions in the interstellar medium. These f-values are determined by combining emission branching fractions with radiative lifetimes. Branching fractions are measured using classical spectroradiometry on an optically thin source. Radiative lifetimes are from …