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Full-Text Articles in Physical Sciences and Mathematics

Large Amplitude L=1 Coherent Structures In Non-Neutral Plasmas Confined In A Cylindrical Trap, Ross L. Spencer, Grant W. Mason Jun 1993

Large Amplitude L=1 Coherent Structures In Non-Neutral Plasmas Confined In A Cylindrical Trap, Ross L. Spencer, Grant W. Mason

Faculty Publications

The computation of l= 1 coherent structures in non-neutral plasmas with arbitrary density profiles and for large displacements of the plasma from the symmetry axis of a confining cylindrical trap is described. As the structures are displaced from the axis, they revolve about the symmetry axis with a frequency that typically increases with displacement. The plasma also is distorted into an approximately elliptical shape. The frequency shifts and the eccentricities as a function of displacement, plasma size, and the shape of the density profile are both computed numerically and calculated analytically. The results are shown to be consistent with data …


Photoluminescence And Absorption Studies Of Defects In Cdte And Znxcd1-Xte Crystals, Cheryl Barnett Davis, David D. Allred, A. Reyes-Mena, Jesus González-Hernández, Ovidio González, Bret C. Hess, Worth P. Allred May 1993

Photoluminescence And Absorption Studies Of Defects In Cdte And Znxcd1-Xte Crystals, Cheryl Barnett Davis, David D. Allred, A. Reyes-Mena, Jesus González-Hernández, Ovidio González, Bret C. Hess, Worth P. Allred

Faculty Publications

We have studied at cryogenic temperatures photoluminescence features which lie more than 0.15 eV below the band edge in ZnxCd1-xTe (0≤x≤0.09) crystals. The same features, namely a defect band which lies at about 0.13-0.20 eV below the band-gap energy and a peak at 1.1 eV, that are observed in pure CdTe samples are observed in these alloy materials. In annealed samples we observe that the 1.1 eV feature, which has been attributed to tellurium vacancies, increases with fast cooling. Increased concentrations of tellurium vacancies can be understood in terms of the phase diagram of CdTe which indicates that higher concentrations …


Low-Frequency Feature In The First-Order Raman Spectrum Of Amorphous Carbon, David D. Allred, Qi Wang, Jesus González-Hernández Mar 1993

Low-Frequency Feature In The First-Order Raman Spectrum Of Amorphous Carbon, David D. Allred, Qi Wang, Jesus González-Hernández

Faculty Publications

In the first-order Raman spectrum of amorphous carbon (a-C) there is a low-frequency feature in the 200-900-cm-1 region. This feature is characteristic of the highly disordered amorphous-carbon materials. We note that the intensity of this feature is very sensitive to the thermal history of samples, thus suggesting that it is an important measure of the degree of disorder of the a-C materials. We also discuss the relationship between this feature and the phonon density of states of graphite.


Exponential Growth Of An Unstable L=1 Diocotron Mode For A Hollow Electron Column In A Warm-Fluid Model, S. Neil Rasband, Ross L. Spencer, Richard R. Vanfleet Mar 1993

Exponential Growth Of An Unstable L=1 Diocotron Mode For A Hollow Electron Column In A Warm-Fluid Model, S. Neil Rasband, Ross L. Spencer, Richard R. Vanfleet

Faculty Publications

Numerical investigations of a warm-fluid model with an isothermal equation of state for the perpendicular dynamics of an axisymmetric, magnetically confined pure electron plasma predict an exponentially unstable, l=1, diocotron mode for hollow density profiles. The unstable mode can be identified with a stable, nonsmooth mode that exists in cold drift models but which is destabilized by finite temperature effects. The unstable mode has many properties similar to the experimental results reported by Driscoll [Phys. Rev. Lett. 64, 645 (1990)].


Ti-Ii Transition Probabilities And Radiative Lifetimes In Ti+ And The Solar Titanium Abundance, A. Bizzarri, M.C.E. Huber, A. Noels, N. Grevesse, Scott D. Bergeson, P. Tsekeris, J. E. Lawler Jan 1993

Ti-Ii Transition Probabilities And Radiative Lifetimes In Ti+ And The Solar Titanium Abundance, A. Bizzarri, M.C.E. Huber, A. Noels, N. Grevesse, Scott D. Bergeson, P. Tsekeris, J. E. Lawler

Faculty Publications

Transition probabilities of 100 Ti-II emission lines, originating from 7 different atomic levels, have been determined by combining branching fractions with radiative lifetimes. The branching fractions were meaures using Fourier transform spectroscopy on a hollow cathode. The radiative lifetimes of these 7 – and 35 additional – levels were measured using time resolved laser-induced fluorescence on a slow Ti ion beam. The transition probabilities of 21 very weak lines have been used to derive a solar titanium abundance of aTi=log(NTi/NH)+12=5.04±0.04 dex, which is insensitive to the solar model. This value is in …


Transition Probabilities For The 3s23p(2PO)–3s3p2(4P) Intersystem Lines Of Si Ii, Anthony G. Calamai, Peter L. Smith, Scott D. Bergeson Jan 1993

Transition Probabilities For The 3s23p(2PO)–3s3p2(4P) Intersystem Lines Of Si Ii, Anthony G. Calamai, Peter L. Smith, Scott D. Bergeson

Faculty Publications

Intensity ratios of lines of the spin-changing "intersystem" multiplet of Si II (4P → 2Po) at 234 nm have been used to determine electron densities and temperatures in a variety of astrophysical environments. However, the accuracy of these diagnostic calculations have been limited by uncertainties associated with the available atomic data. We report the first laboratory measurement, using an ion-trapping technique, of the radiative lifetimes of the three metastable levels of the 3s3p2 4P term of Si II. Our results are 104 ± 16, 406 ± 33, and 811 ± 77 µs for …


Radiative Lifetimes, Branching Ratios, And Absolute Transition Probabilities In Cr Ii And Zn Ii, Scott D. Bergeson, J. E. Lawler Jan 1993

Radiative Lifetimes, Branching Ratios, And Absolute Transition Probabilities In Cr Ii And Zn Ii, Scott D. Bergeson, J. E. Lawler

Faculty Publications

New absolute atomic transition probability measurements are reported for 12 transitions in Cr II and two transitions in Zn II. These transition probabilities are determined by combining branching ratios measured by classical techniques and radiative lifetimes measured by time-resolved laser-induced fluorescence. The measurements are compared with branching fractions, radiative lifetimes, and transition probabilities in the literature. The 206 nm resonance multiplets in Cr II and Zn II are included in this work. These multiplets are very useful in determining the distribution of the elements in the gas versus grain phases in the interstellar medium.


Oscillator Strengths Of The Si Ii 181 Nanometer Resonance Multiplet, Scott D. Bergeson, J. E. Lawler Jan 1993

Oscillator Strengths Of The Si Ii 181 Nanometer Resonance Multiplet, Scott D. Bergeson, J. E. Lawler

Faculty Publications

We report Si II experimental log (gf)-values of –2.38(4) for the 180.801 nm line, of –2.18(4) for the 181.693 nm line, and of –3.29(5) for the 181.745 nm line, where the number in parenthesis is the uncertainty in the last digit. The overall uncertainties (~10%) include the 1 σ random uncertainty (~6%) and an estimate of the systematic uncertainty. The oscillator strengths are determined by combining branching fractions and radiative lifetimes. The branching fractions are measured using standard spectroradiometry on an optically thin source; the radiative lifetimes are measured using time-resolved laser-induced fluorescence.