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Air Force Institute of Technology

2005

Gallium nitride

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Limitations In Time Resolved Photoluminescence Of Gallium Nitride Using A Streak Camera, Thomas R. Jost Mar 2005

Limitations In Time Resolved Photoluminescence Of Gallium Nitride Using A Streak Camera, Thomas R. Jost

Theses and Dissertations

Semiconductor performance is often characterized in terms of the rate at which its carrier recombination processes occur. Carrier recombination, including radiative, and Shockley-Read-Hall and Auger (both nonradiative), occurs at ultra-fast times in the picosecond or femtosecond regimes. A device which can measure both spectral data and temporal phenomena at this speed is the streak camera. The capability to do time-resolved spectroscopy of wide band gap semiconductors using a streak camera has been established at AFIT for the first time. Time resolved photoluminescence (TRPL) from samples of gallium nitride were measured at temperatures of 5 K over spectral bands of 36.6 …

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Deep Level Defects In Electron-Irradiated Aluminum Gallium Nitride Grown By Molecular Beam Epitaxy, Michael R. Hogsed Mar 2005

Deep Level Defects In Electron-Irradiated Aluminum Gallium Nitride Grown By Molecular Beam Epitaxy, Michael R. Hogsed

Theses and Dissertations

Aluminum gallium nitride (AlGaN)-based devices are attractive candidates for integration into future Air Force communication and sensor platforms, including those that must operate in harsh radiation environments. In this study, the electrical and optical properties of 1.0 MeV electron irradiated n-AlxGa1-xN are characterized for aluminum mole fraction x = 0.0 to 0.3 using deep level transient spectroscopy (DLTS), temperature-dependent Hall, and cathodoluminescence (CL) measurements. Following irradiation of the AlGaN, it is found that four different electron traps are created, having energy levels within 0.4 eV below the conduction band edge. Three of these traps correspond to …

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