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Electrical Activation Studies Of Silicon Implanted AlXGa1-XN, Timothy W. Zens

Theses and Dissertations

Electrical activation studies of silicon implanted Al_xGa_1-xN grown on sapphire substrates were conducted as a function of ion dose, anneal temperature, and anneal time. Silicon ion doses of 1x10¹³, 5x10¹³, and 1x10¹⁴ cm^-2 were implanted in AlxGa1-xN samples with aluminum mole fractions of 0.1 and 0.2 at an energy of 200 keV at room temperature. The samples were proximity cap annealed at temperatures from 1100 to 1350 ºC and anneal times of 20 to 40 minutes with a 500 Å thick AlN cap in a nitrogen environment. The Hall coefficient …