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Full-Text Articles in Physical Sciences and Mathematics
Carbon Interstitial In The Diamond Lattice, C Weigel, David Peak, J W. Corbett, R P. Messmer, G D. Watkins
Carbon Interstitial In The Diamond Lattice, C Weigel, David Peak, J W. Corbett, R P. Messmer, G D. Watkins
All Physics Faculty Publications
Linear-combination-of-atomic-orbitals-molecular-orbitals cluster calculations using the extended Hückel theory are carried out for the interstitial carbon in the diamond lattice. The results suggest that the interstitial configuration is not the tetrahedral or hexagonal site, as has been previously assumed, but is instead an "interstitialcy" configuration, i.e., either a split- 〈100〉 interstitial (which our results favor) or a bond-centered interstitial. The predicted minimum-energy configuration changes with charge state, suggesting that the interstitial in the diamond lattice is a possible example of the Bourgoin mechanism of athermal migration of a defect in the presence of ionizing radiation.
Ionization‐Enhanced Diffusion: Ion Implantation In Semiconductors, J Bourgoin, David Peak, J W. Corbett
Ionization‐Enhanced Diffusion: Ion Implantation In Semiconductors, J Bourgoin, David Peak, J W. Corbett
All Physics Faculty Publications
A model for the diffusion of implanted interstitials during implantation is introduced and shown to be able to account for the tails observed in ion profiles. It is argued that mechanisms of ionization‐enhanced diffusion can explain some of the anomalous diffusion mechanisms observed in semiconductors. Indications for the existence of such mechanisms in the field of ion implantation in semiconductors are discussed.