Physical Sciences and Mathematics Commons^™

Thermodynamic Limit To Photonic-Plasmonic Light-Trapping In Thin Films On Metals, Eric A. Schiff

Physics - All Scholarship

We calculate the maximum optical absorptance enhancements in thin semiconductor films on metals due to structures that diffuse light and couple it to surface plasmon polaritons. The calculations can be used to estimate plasmonic effects on light-trapping in solar cells. The calculations are based on the statistical distribution of energy in the electromagnetic modes of the structure, which include surface plasmon polariton modes at the metal interface as well as the trapped waveguide modes in the film. The enhancement has the form 4n²+nλ/h (n – film refractive index, λ – optical wavelength, h …

Electronic And Magnetic Excitations In Graphene And Magnetic Nano-Ribbons, Maher Zakaria Ahmed Selim

Electronic Thesis and Dissertation Repository

The discovery of graphene - a 2D material with superior physical properties - in 2004 was important for the intensive global research to find alternatives to three-dimensional (3D) semiconductor materials in industry. At the same time there have been exciting advances for 2D magnetic materials on the nanometer scale. The superior properties of graphene are mainly attributed to its crystal structure and its relatively short-range interactions. These properties show that natural and artificial 2D materials are promising for new applications.

In this thesis we have carried out a comprehensive investigation of the effects of the 2D lattice structures, the roles …

Synthesis, Field Emission And Associated Degradation Mechanisms Of Tapered Zno Nanorods, Gregory M. Wrobel Mr.

Master's Theses

Equation 1..... 4

Equation 2..... 4

Equation 3..... 6

Equation 4..... 7

Equation 5..... 9

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Equation 9..... 14

Equation 10..... 40

Equation 11..... 51

Synthesis, Field Emission and Associated Degradation Mechanisms of Tapered ZnO Nanorods

Gregory Michael Wrobel, M.S.

University of Connecticut, 2011

Modern development of field emitter arrays (FEA) has been made possible, partly thanks to the synthesis and development of one-dimensional (1D) nanostructures. High aspect ratio 1D nanostructures effectively amplify the electric field at the emitter tips, allowing electrons to be extracted at relatively low electric field. An inexpensive …

Influence Of Tert-Butylpyridine On The Band Energetics Of Nanostructured Tio2 Electrodes And The Photoelectrochemical Properties Of Dye-Seneitized Electrodes, Shu-Ming Yang, Ji-Chao Wang, Hui-Zhi Kou, Hong-Bin Xue, Hong-Jun Wang, Yu-Ling Guo

Journal of Electrochemistry

The flat band edges (Efb) of nanostructured TiO2 electrodes in electrolyte solutions with tert-butylpyridine (TBP) of different concentrations have been determined with spectroelectrochemical technique. TBP played a role in band energetics of nanostructured TiO2 electrodes. The Efb values of -2.25, -2.46 and -2.62 V were determined in three 0.2 mol•L-1 tetrabutylammonium perchlorate (TBAP) acetonitrile electrolytes which contain 0, 0.2 and 0.4 mol•L-1 TBP respectively. The addition of Li+ ions shifted Efb positively. The Efb values of -1.12, -1.22 and -1.30 V were determined in three 0.2 mol•L-1 LiClO4 acetonitrile electrolytes which contain 0, 0.2 and 0.4 mol•L-1 TBP respectively. The …

Complementary Metal-Oxide Semiconductor-Compatible Detector Materials With Enhanced 1550 Nm Responsivity Via Sn-Doping Of Ge/Si(100), Richard T. Beeler, Jay Mathews, Mee-Yi Ryu, Yung-Kee Yeo, Jose Menendez, John Kouvetakis

Faculty Publications

Previously developed methods used to grow Ge_1−ySn_y alloys on Si are extended to Sn concentrations in the 10¹⁹−10²⁰ cm⁻³ range. These concentrations are shown to be sufficient to engineer large increases in the responsivity of detectors operating at 1550 nm. The dopant levels of Sn are incorporated at temperatures in the 370–390 °C range, yielding atomically smooth layers devoid of threading defects at high growth rates of 15–30 nm/min. These conditions are far more compatible with complementary metal-oxide semiconductor processing than the high growth and processing temperatures required to achieve the same …

Fabrication And Characterization Of Graphene Hydrogel Via Hydrothermal Approach As A Scaffold For Preliminary Study Of Cell Growth, Huang Nay Ming

Huang Nay Ming

Three-dimensional assembly of graphene hydrogel is rapidly attracting the interest of researchers because of its wide range of applications in energy storage, electronics, electrochemistry, and waste water treatment. Information on the use of graphene hydrogel for biological purposes is lacking, so we conducted a preliminary study to determine the suitability of graphene hydrogel as a substrate for cell growth, which could potentially be used as building blocks for biomolecules and tissue engineering applications. A three-dimensional structure of graphene hydrogel was prepared via a simple hydrothermal method using two-dimensional large-area graphene oxide nanosheets as a precursor. The concentration and lateral size …

Electronically Enhanced Surface Diffusion During Ge Growth On Si(100), Ali Orguz Er, Hani E. Elsayed-Ali

Physics Faculty Publications

The effect of nanosecond pulsed laser excitation on surface diffusion during the growth of Ge on Si(100) at 250 °C was studied. In situ reflection high-energy electron diffraction was used to measure the surface diffusion coefficient while ex situ atomic force microscopy was used to probe the structure and morphology of the grown quantum dots. The results show that laser excitation of the substrate increases the surface diffusion during the growth of Ge on Si(100), changes the growth morphology, improves the crystalline structure of the grown quantum dots, and decreases their size distribution. A purely electronic mechanism of enhanced surface …