Physical Sciences and Mathematics Commons^™

Gate-Controlled Quantum Dots In Two-Dimensional Tungsten Diselenide And One-Dimensional Tellurium Nanowires, Shiva Davari Dolatabadi

Graduate Theses and Dissertations

This work focuses on the investigation of gate-defined quantum dots in two-dimensional transition metal dichalcogenide tungsten diselenide (WSe2) as a means to unravel mesoscopic physical phenomena such as valley-contrasting physics in WSe2 flakes and its potential application as qubit, as well as realizing gate-controlled quantum dots based on elementaltellurium nanostructures which may unlock the topological nature of the host material carriers such as Weyl states in tellurium nanowires.The fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe2 are reported. The gate electrodes in the device design are located above and below the WSe2 nanoflakes to accumulate …

Quantum Dots In Two-Dimensional Tungsten Diselenide, Jeb Allen Michael Stacy

Graduate Theses and Dissertations

This work focuses on the investigation of single and double quantum dots in two-dimensional transition metal dichalcogenide tungsten diselenide (WSe_2) as a means to evaluate the valley degree of freedom as a potential qubit and ambipolar tungsten diselenide monolayers as single photon sources. Gate-defined quantum dots in monolayer and bilayer WSe_2 were fabricated and characterized. Single dot devices are gated from above and below the WSe_2 to accumulate a hole gas. Temperature dependence of Coulomb-blockade peak height is consistent with single-level transport. Excited-state transport in the quantum dot is shown for both monolayer and bilayer devices. Magnetic field dependence of …

Quantum Transport And Electric-Field Effects In Layered Topological Semimetals And Magnetic Materials, Arash Fereidouni Ghaleh Minab

Graduate Theses and Dissertations

This dissertation describes transport experiments on quantum devices in layered Dirac nodal line topological semimetals and antiferromagnetic materials down to a few layers. We used gate-induced effects to alter the transport properties of these materials.

First, we introduced current annealing in topological semimetals to achieve high-quality devices. We demonstrate current annealing to substantially improve the electronic transport properties of 2D topological semimetal flakes. Contact resistance and resistivity were improved by factors up to 2,000,000 and 20,000, respectively, in devices based on exfoliated flakes of two topological semimetals, ZrSiSe and BaMnSb2. Using this method, carrier mobility in ZrSiSe improved by a …

Crystal Growth And Property Tuning Of Layered Magnetic Topological Semimetals, Krishna Pandey

Graduate Theses and Dissertations

The demand for energy-efficient devices has been growing rapidly due to the need for data-driven technologies and the global energy crisis. As device size approaches the atomic scale, the miniaturization of electronic devices may stop in the near future unless fundamentally new materials or device concepts are developed. The emergent topological materials with exotic properties show remarkable robustness against crystal lattice defects, which are promising for next-generation technology. These materials host exotic properties such as high mobility, large magnetoresistance, chiral anomaly, and surface Fermi arcs, etc. Among various topological materials, the ZrSiS-family materials exhibit two types of Dirac states, which …