Physical Sciences and Mathematics Commons^™

Kinetic Monte Carlo Simulations Of Quantum Dot Self-Assembly, Matthew Abramson, Hunter J. Coleman, Paul J. Simmonds, Tim P. Schulze, Christian Ratsch

Physics Faculty Publications and Presentations

In the Stranski–Krastanov growth mode for heteroepitaxial systems, layer-by-layer growth is followed by the formation and growth of three-dimensional (3D) islands. In this paper, we use a kinetic Monte Carlo method to simulate this growth mode behavior. We present a detailed and systematic investigation into the effects of key model parameters including strain, growth temperature, and deposition rate on this phenomenon. We show that increasing the strain lowers the apparent critical thickness that is defined by the onset of 3D island formation. Similarly, increasing the growth temperature lowers the apparent critical thickness, until intermixing, and the resulting relevance of entropic …

Аn Optical Study Of Strain Relaxation And Interdiffusion In Znse/Zncdse Quantum Wells Modified By Γ-Irradiation, Muratbay B. Sharibaev, Kanatbay A. Ismailov, Ibrohim N. Karimov, Murodjon Z. Nosirov

Scientific Bulletin. Physical and Mathematical Research

If we turn to the literature data, it is known that the degradation of CdZnTe / ZnTe and CdZnSe /ZnSe quantum wells and usually includes two types of processes: (i) fast (as called dynamic, by analogy with the degradation of heterostructures based on A3B5 materials) - germination and propagation of extended defects from a GaAs substrate. This process in CdZnSe / ZnSe is slowed down by various technological methods (treatment of a substrate in sulfur; reduction of a damaged layer in a GaAs substrate; deposition of a GaAs epitaxial buffer layer; use of the concept of compensation of bipolar stresses; …

Lambert W Function Methods In Double Square Well And Waveguide Problems, Narola Harsh Bharatbhai, P C Deshmukh, Robert B. Scott, Ken Roberts, Sree Ram Valluri

Physics and Astronomy Publications

Using methods related to the Lambert W function, we present solutions of two apparently different problems: (1) The one-dimensional double square well potential in quantum mechanics and (2) The transverse electric and magnetic modes for a step-index electromagnetic waveguide. The solution techniques provide insight into the bound energy states for the single and double square well problems and the allowed modes of propagation in a waveguide with varying refractive indices. The solutions can be viewed in either of two related complex plane representations. Comparison of the solution geometries suggests that interesting applications may be possible in nanostructures and devices which …

Tutorial: The Quantum Finite Square Well And The Lambert W Function, Sree Ram Valluri, Ken Roberts

Physics and Astronomy Publications

We present a solution of the quantum mechanics problem of the allowable energy levels of a bound particle in a one-dimensional finite square well. The method is a geometric-analytic technique utilizing the conformal mapping w -> z = we(w) between two complex domains. The solution of the finite square well problem can be seen to be described by the images of simple geometric shapes, lines, and circles, under this map and its inverse image. The technique can also be described using the Lambert W function. One can work in either of the complex domains, thereby obtaining additional insight into the …

Hybrid Type-I Inas/Gaas And Type-Ii Gasb/Gaas Quantum Dot Structure With Enhanced Photoluminescence, Hai-Ming Ji, Baolai Liang, Paul J. Simmonds, Bor-Chau Juang, Tao Yang, Robert J. Young, Diana L. Huffaker

Physics Faculty Publications and Presentations

We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL.These hybrid QD structures show potential for high efficiency QD solar cell applications.

Optical Properties Of Zno/(Zn, Mg)O Quantum Wells, Thierry Bretagnon

Turkish Journal of Physics

This paper reviews the optical properties of ZnO/(Zn, Mg)O single quantum wells grown by molecular beam epitaxy. Both heteroepitaxial quantum well growth along the polar c-direction and homoepitaxial quantum well growth on the nonpolar M plane cases are considered. The optical properties of these quantum wells are investigated by using reflectance, continuous wave photoluminescence, and time-resolved photoluminescence spectroscopies. The quantum-confined Stark effect dominates the properties of the excitons for polar quantum wells. The magnitude of the internal electric field that is induced by both spontaneous and piezoelectric polarizations is determined by comparing the experimental results with a variational calculation of …

Electro-Optical And All-Optical Switching In Multimode Interference Waveguides Incorporating Semiconductor Nanostructures, Nathan Bickel

Electronic Theses and Dissertations

The application of epitaxially grown, III-V semiconductor-based nanostructures to the development of electro-optical and all-optical switches is investigated through the fabrication and testing of integrated photonic devices designed using multimode interference (MMI) waveguides. The properties and limitations of the materials are explored with respect to the operation of those devices through electrical carrier injection and optical pumping. MMI waveguide geometry was employed as it offered advantages such as a very compact device footprint, low polarization sensitivity, large bandwidth and relaxed fabrication tolerances when compared with conventional single-mode waveguide formats. The first portion of this dissertation focuses on the characterization of …

Molecular Beam Epitaxy Of High Mobility In0.75Ga0.25As For Electron Spin Transport Applications, Paul J. Simmonds, S. N. Holmes, H. E. Beere, I. Farrer, F. Sfigakis, D. A. Ritchie, M. Pepper

Paul J. Simmonds

The authors describe the molecular beam epitaxy of relaxed, nominally undoped In_0.75Ga_0.25As–In_0.75Al_0.25As quantum well structures grown on InP substrates. The maximum two-dimensional electron density is 2 × 10¹¹cm⁻², with a peak mobility of 2.2 × 10⁵cm² V⁻¹s⁻¹ at 1.5K. In high magnetic field, the electron g-factor was shown to have a magnitude of 9.1 ± 0.1 at Landau-level filling factor of 4. The Rashba coefficient, determined from the analysis of the magnetoresistance at high Landau-level filling factor (>12), …

Spin-Orbit Coupling In An In0.52Ga0.48As Quantum Well With Two Populated Subbands, P. J. Simmonds, S. N. Holmes, H. E. Beere, D. A. Ritchie

Paul J. Simmonds

Structural inversion asymmetry controls the magnitude of Rashba spin-orbit coupling in the electron energy spectrum of a narrow band gap semiconductor. We investigate this effect for a series of two-dimensional electron gases in In_0.52Ga_0.48As quantum wells, surrounded by In_0.52Al_0.48As barriers, where either one or two electric subbands are populated. Structural inversion asymmetry does not exist at low carrier density while at higher carrier densities (above (4–5) × 10¹¹ cm⁻²), a finite spin splitting is observed. The spin orbit coupling coefficients (α) are determined from the power spectrum …

Growth-Temperature Optimization For Low Carrier-Density In0.75Ga0.25As-Based High Electron Mobility Transistors On Inp, Paul J. Simmonds, H. E. Beere, D. A. Ritchie, S. N. Holmes

Paul J. Simmonds

Two-dimensional electron gases (2DEGs) were formed in undoped In_0.75Al_0.25As / In_0.75Ga_0.25As / In_0.75Al_0.25As quantum wells. The optimal growth temperature for this structure is 410°C, with peak 2DEG electron mobility and density values of μ = 221000 cm²/V s and n = 1.36 × 10¹¹ cm⁻² at 1.5 K. This electron mobility is equal to the highest previously published for these undoped structures but with a factor of 2 reduction in n. This has been achieved through the use of a significantly thinner InAlAs …

Electron And Hole Dynamics Of Inas∕Gaasinas∕Gaas Quantum Dot Semiconductor Optical Amplifiers, I. O'Driscoll, T. Piwonski, C. F. Schleussner, J. Houlihan, G. Huyet, R. J. Manning

Physical Sciences Publications

Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs∕GaAs quantum dot amplifiers. The study reveals that hole recovery and intradot electron relaxation occur on a picosecond time scale, while the electron capture time is on the order of 10ps. A longer time scale of hundreds of picoseconds is associated with carrier recovery in the wetting layer, similar to that observed in quantum well semiconductor amplifiers.

Optical Characterization And Modeling Of Compositionally Matched Indium Arsenide-Antimonide Bulk And Multiple Quantum Well Semiconductors, Scott C. Phillips

Theses and Dissertations

Indium arsenide-antimonide (InAsSb) semiconductors have been determined to emit in the 3-5 micrometer range, the window of interest for countermeasures against infrared electro-optical threats. This experiment set out to cross the bulk to quantum well characterization barrier by optically characterizing two sets of compositionally matched type I quantum well and bulk well material samples. Absorption measurements determined the band gap energy of the bulk samples and the first allowed subband transition for the quantum wells. By collecting absorption spectra at different temperatures, the trend of the energy transitions was described by fitting a Varshni equation to them. The expected result …

Building Blocks For Time-Resolved Laser Emission In Mid-Infrared Quantum Well Lasers, Gabriel D. Mounce

Theses and Dissertations

The objective of this research is to improve the performance of mid-infrared semiconductor quantum-well lasers. Lasers operating in the mid-infrared are useful for many Air Force applications which include infrared (IR) countermeasures in particular. Countermeasure applications require lasers that are compact, and able to emit at high powers while operating at room temperature. Limits to power increases are seen in the transverse modal development of laser oscillation. These modes typically form in the waveguiding active region contributing to the laser output. However, competing modes outside of this region also develop when the confining structural layers have the right characteristics. These …

Carrier Dynamics In Mid-Infrared Quantum Well Lasers Using Time-Resolved Photoluminescence, Steven M. Gorski

Theses and Dissertations

Research in mid-infrared laser technology has uncovered numerous applications for commercial and government use. A limiting factor for mid-infrared semiconductors is nonradiative recombination, which is a process that produces excess heat without emitting a photon. Nonradiative recombination mechanisms occur over a short time period and difficult to measure. Growth methods have significantly reduced the nonradiative recombination in some materials. The objective of this research is to further the understanding of how quantum well structures impact carrier recombination. InAsSb/InAlASb and InAs/GaInSb quantum well structures were studied with time-resolved photoluminescence utilizing upconversion, a non-linear wave mixing technique. This research reports Shockley-Read-Hall, radiative, …

Time-Resolved Photoluminescence Of Inas/Gainsb Quantum Well Lasers, Michael R. Mckay

Theses and Dissertations

In the world of semiconductor photonic device fabrication, one important objective may be to extract as much light as possible from the device. In these devices, photons are created when electrons recombine with holes by transitioning from a high-energy state to a lower one. Unfortunately, electron-hole recombination does not always result in the formation of a photon. There are three basic types of recombination: the first results in the formation of a photon and is called radiative recombination; and the second and third, known as Shockley-Read-Hall and Auger recombination, result in the heating of the device and do not produce …

Numerical Study Of Optical Delay In Semiconductor Multilayer Distributed Bragg Reflector And Tunable Microcavity Structures, Michael I. K. Etan

Theses and Dissertations

The Air Force has a growing need for the greater bandwidth, speed, and flexibility offered by optical communication links. Future space systems and airborne platforms will most likely use optical signals for efficient power transmission and to minimize the possibility of spoofing and eavesdropping. Tunable optical delays play an important role in the implementation of free space optical communication links. The primary challenge in implementing these systems is the active maintenance of coherent wave fronts across the system's optical aperture. For space applications, this aperture may he hundreds of meters in diameter. Spatial segmentation of a large aperture into smaller …

Photoluminescence Of Single Quantum Well Structures In Gallium Arsenide, Christian A. Bartholomew

Theses and Dissertations

The continued development of state-of the-art semiconductor technologies and devices by the United States Air Force and the Department of Defense requires accurate and efficient techniques to evaluate and model these new materials. Of particular interest to the Air Force are quantum well structures which can be used for small-scale laser sources in fly-by-light applications, as efficient infrared countermeasures to heat-seeking missiles, or as advanced seekers in optically guided missiles. This thesis provides the initial experimental procedures and data necessary to begin producing accurate yet robust models. Although carrier effective masses could not be evaluated using hot-electron photoluminescence, photoluminescence excitation …

Band Structure Anisotropy In Semiconductor Quantum Wells, Steven J. Novotny

Theses and Dissertations

The focus of this research is an investigation of energy band anisotropy in simple quantum well structures. This anisotropy results from the asymmetry of the periodic potential within the crystal lattice. For sufficiently high doping levels, band structure anisotropy is expected to play an important role in the evaluation of the electronic and optical properties of the quantum well structures. The analysis uses a model based on a 6x6 Luttinger-Kohn k.p approach for bulk material valence band structure together with the Envelope Function Approximation. The model is used to analyze Si/SiGe, AlGaAs/GaAs, and GaAs/InGaAs quantum wells for the 001 and …

Optical Physics Of Microcavity Surface Emitting Lasers, Michael J. Noble

Theses and Dissertations

This dissertation consists of an in-depth theoretical analysis of the optical impact of transverse index confinement on the lasing modes of microcavity surface emitting lasers. Two different variational techniques were employed to calculate the relevant optical laser parameters: (1) modal resonance, field profile, (2) confinement factor, and (3) threshold gain. Through a semianalytic field analysis, two new confinement related effects were discovered: (1) a polarization dependent change in mirror reflectance with aperture radius, and (2) a mode dependent blueshift. Through a numerical field analysis, the physical mechanisms governing diffraction were ascertained. These are: (1) the transverse confinement of the optical …

Time Resolved Photoluminescence Spectra Of A Mid-Infrared Multiple Quantum Well Semiconductor Laser, Anthony L. Franz

Theses and Dissertations

Recombination mechanisms in mid-IR semiconductor lasers are strongly dependent on the carrier density of the active region. The objective of this research is to improve previous carrier density estimates through the incorporation of spectral information. One hundred photoluminescence (PL) spectra were calculated for a variety of carrier densities. Calculations were made for an InAsSb/InAlAsSb multiple quantum well laser sample assuming parabolic bands. The widths of the calculated spectral profiles were tabulated as a function of carrier density. Actual spectra were measured using the Ultrafast Mid-Infrared Photoluminescence System, which uses upconversion to measure the PL intensity in time steps smaller than …

Theoretical Modeling Of Linear Absorption Coefficients In Si/Si1-Xgex Multiple Quantum Well Photodetectors, Kevin D. Greene

Theses and Dissertations

Si/Si_1-xGe_x MQW Infrared Photodetectors offer the promise of normal incidence photodetection tunable over the range of 3-12 micrometers wavelength range at temperatures above 40 K. This system is attractive because the Si_1-xGe_x offers greater compatibility with existing Si based signal processing circuitry. Band structures, momentum matrix elements and linear absorption coefficients are computed using a Luftinger-Kohn k/p analysis for Si/Si_1-xGe_x quantum wells grown in the 110 direction. The absorption coefficient as a function of energy and wavelength is calculated by two methods: a delta function fit to intersubband transitions, and a …

Intersubband Lasing Lifetimes Of Sige/Si And Gaas/Algaas Multiple Quantum Well Structures, Greg Sun, L. Friedman, Richard A. Soref

Physics Faculty Publications

The feasibility of population inversion is studied for the SiGe/Si system and compared with that of GaAs/AlGaAs. Because of the absence of strong polar optical phonon scattering in SiGe/Si, the lifetime difference of the upper and lower lasing levels, to which the population inversion and laser gain are proportional, is consistently an order of magnitude larger than that of GaAs/AlGaAs; nor does it show the sudden drop to zero or negative values when the lasing energy exceeds the optical phonon energy. Both systems studied are superlattices, each period of which consists of three coupled quantum wells and barriers.

Visible Luminescence From Single Crystal‐Silicon Quantum Wells, Peter N. Saeta, A. C. Gallagher

All HMC Faculty Publications and Research

Single crystal‐silicon quantum wells with SiO₂ barriers have been grown from SIMOX silicon‐on‐insulator substrates. Photoluminescence in the red and near‐infrared is observed for average well width <8 >nm, with peak signal for 2‐nm average width. The luminescence spectrum is independent of well width for SiO₂ barriers, but shifts 0.3 eV to higher energy upon removal of the upper oxide layer with HF. Both results suggest the importance of radiation from surface states.

A Theoretical Model For Biased Superlattice Devices, Michael Ferner

Theses

A model describing the subband structures and tunneling characteristics of superlattices is presented. The model solves the envelope function equations by the transfer matrix technique. The results are codified in a Fortran program, and the model is applied to several structures.

Superlattice have been studied extensively, however many new structures await investigation.

This model is presented as a preliminary design tool. The program allows a designer to do preliminary calculations. This type of investigation guides a designer toward a goal by making possible a large number of calculations on many different structures.

A Theoretical Study Of The Subband Structures And Tunneling In Polytype Heterostructures, Hong Chen

Theses

A theoretical study of the electronic and optical properties in polytype heterostructures is presented in this thesis.

In the first part of the thesis (Chap. 2 and Chap. 3), an explicit expression for calculating the subband structure and tunneling is formulated by the incorporation of the envelope function approximations and the transfer matrix technique. It is based on the k*p theory as done to date, but contains two significant improvements: a more realistic treatment of the spatial and energetic dependance of effective masses and band edges; the availability of the calculations, in favor of direct numerical evaluation, to various quantum …