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Full-Text Articles in Physical Sciences and Mathematics
A Long-Channel Model For The Asymmetric Double-Gate Mosfet Valid In All Regions Of Operation, Abhishek Kammula, Bradley Minch
A Long-Channel Model For The Asymmetric Double-Gate Mosfet Valid In All Regions Of Operation, Abhishek Kammula, Bradley Minch
Bradley Minch
We present a physically based, continuous analytical model for long-channel double-gate MOSFETs. The model is particularly well suited for implementation in circuit simulators due to the simple expressions for the current andthe continuous nature of the derivatives of the current which improves convergence behavior.
Multiple-Scattering Theory Of Itinerant Electron Magnetism In Random Muffin-Tin Alloys, S. Kaprzyk, A. Bansil
Multiple-Scattering Theory Of Itinerant Electron Magnetism In Random Muffin-Tin Alloys, S. Kaprzyk, A. Bansil
Arun Bansil
We discuss the equilibrium electronic structure of a random binary alloy within the framework of a spin-dependent muffin-tin Hamiltonian. The disorder is treated on the basis of the single-site approximations (SSA), especially the average t-matrix and the coherent potential approximations. The local-spin-density (LSD) functional approach is employed to relate the electron and the spin densities with the atomic potentials, thus providing a fully self-consistent description of the ground-state properties of the random alloy. By using the atomic magnetic moments as expansion parameters, a Stoner-type linearized form of the full SSA-LSD formalism is developed. This analysis yields insights into the nature …